Electrical characterization of the soft breakdown failure mode in MgO layers

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dc.contributor.authorMiranda, Enrique
dc.contributor.authorO'Connor, Éamon
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorMonaghan, Scott
dc.contributor.authorLong, Rathnait D.
dc.contributor.authorO'Connell, Dan
dc.contributor.authorHurley, Paul K.
dc.contributor.authorHughes, Gregory
dc.contributor.authorCasey, P.
dc.contributor.funderGeneralitat de Catalunya
dc.contributor.funderMinisterio de Ciencia y Tecnología
dc.contributor.funderScience Foundation Ireland
dc.date.accessioned2017-07-28T11:47:31Z
dc.date.available2017-07-28T11:47:31Z
dc.date.issued2009
dc.description.abstractThe soft breakdown (SBD) failure mode in 20 nm thick MgO dielectric layers grown on Si substrates was investigated. We show that during a constant voltage stress, charge trapping and progressive breakdown coexist, and that the degradation dynamics is captured by a power-law time dependence. We also show that the SBD current-voltage (I-V) characteristics follow the power-law model I = aV(b) typical of this conduction mechanism but in a wider voltage window than the one reported in the past for SiO(2). The relationship between the magnitude of the current and the normalized differential conductance was analyzed. (C) 2009 American Institute of Physics. (DOI: 10.1063/1.3167827)en
dc.description.sponsorshipGeneralitat de Catalunya (BE-2007); Ministerio de Ciencia y Tecnolog a (MCyT), Spain (Grant No. TEC2006-13731-C02-01); Science Foundation Ireland (Walton Awards scheme (Grant No. 07/W.1/I1828), (SFI Grant No. 07/W.1/I1828), SFI Ireland National Access Program at the Tyndall National Institute)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid12901
dc.identifier.citationMiranda, E., O’Connor, E., Cherkaoui, K., Monaghan, S., Long, R., O’Connell, D., Hurley, P. K., Hughes, G. and Casey, P. (2009) 'Electrical characterization of the soft breakdown failure mode in MgO layers', Applied Physics Letters, 95(1), pp. 012901. doi: 10.1063/1.3167827en
dc.identifier.doi10.1063/1.3167827
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued1
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4357
dc.identifier.volume95
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.3167827
dc.rights© 2009 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Miranda, E., O’Connor, E., Cherkaoui, K., Monaghan, S., Long, R., O’Connell, D., Hurley, P. K., Hughes, G. and Casey, P. (2009) 'Electrical characterization of the soft breakdown failure mode in MgO layers', Applied Physics Letters, 95(1), pp. 012901 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3167827en
dc.subjectGate oxidesen
dc.subjectStressen
dc.subjectConductionen
dc.subjectElectrical propertiesen
dc.subjectDielectric breakdownen
dc.subjectElectron beam depositionen
dc.subjectLeakage currentsen
dc.subjectElectrical breakdownen
dc.titleElectrical characterization of the soft breakdown failure mode in MgO layersen
dc.typeArticle (peer-reviewed)en
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