SiNx-induced intermixing in AlInGaAs/InP quantum well through interdiffusion of group III atoms

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dc.contributor.authorLee, Ko-Hsin
dc.contributor.authorThomas, Kevin K.
dc.contributor.authorGocaliƄska, Agnieszka M.
dc.contributor.authorManganaro, Marina
dc.contributor.authorPelucchi, Emanuele
dc.contributor.authorPeters, Frank H.
dc.contributor.authorCorbett, Brian M.
dc.contributor.funderHigher Education Authority
dc.contributor.funderScience Foundation Ireland
dc.date.accessioned2017-09-20T10:06:33Z
dc.date.available2017-09-20T10:06:33Z
dc.date.issued2012
dc.description.abstractWe analyze the composition profiles within intermixed and non-intermixed AlInGaAs-based multiple quantum wells structures by secondary ion mass spectrometry and observe that the band gap blue shift is mainly attributed to the interdiffusion of In and Ga atoms between the quantum wells and the barriers. Based on these results, several AlInGaAs-based single quantum well (SQW) structures with various compressive strain (CS) levels were grown and their photoluminescence spectra were investigated after the intermixing process involving the encapsulation of thin SiNx dielectric films on the surface followed by rapid thermal annealing. In addition to the annealing temperature, we report that the band gap shift can be also enhanced by increasing the CS level in the SQW. For instance, at an annealing temperature of 850 degrees C, the photoluminescence blue shift is found to reach more than 110 nm for the sample with 1.2%-CS SQW, but only 35 nm with 0.4%-CS SQW. We expect that this relatively larger atomic compositional gradient of In (and Ga) between the compressively strained quantum well and the barrier can facilitate the atomic interdiffusion and it thus leads to the larger band gap shift. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4764856]en
dc.description.sponsorshipScience Foundation Ireland [07/SRC/I1173]; Higher Education Authority (INSPIRE program)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid93109
dc.identifier.citationLee, K.-H., Thomas, K., Gocalinska, A., Manganaro, M., Pelucchi, E., Peters, F. H. and Corbett, B. (2012) 'SiNx-induced intermixing in AlInGaAs/InP quantum well through interdiffusion of group III atoms', Journal of Applied Physics, 112(9), 093109 (4pp). doi: 10.1063/1.4764856en
dc.identifier.doi10.1063/1.4764856
dc.identifier.endpage5
dc.identifier.issn0021-8979
dc.identifier.issued9
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4728
dc.identifier.volume112
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Strategic Research Cluster/07/SRC/I1173/IE/SRC PiFAS: Photonics - Integration From Atoms to Systems (PiFAS)/
dc.relation.urihttp://aip.scitation.org/doi/10.1063/1.4764856
dc.rights© 2012, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Lee, K.-H., Thomas, K., Gocalinska, A., Manganaro, M., Pelucchi, E., Peters, F. H. and Corbett, B. (2012) 'SiNx-induced intermixing in AlInGaAs/InP quantum well through interdiffusion of group III atoms', Journal of Applied Physics, 112(9), 093109 (4pp). doi: 10.1063/1.4764856 and may be found at http://aip.scitation.org/doi/10.1063/1.4764856en
dc.subjectQuantum wellsen
dc.subjectBand gapen
dc.subjectAnnealingen
dc.subjectMultiple quantum wellsen
dc.subjectChemical interdiffusionen
dc.titleSiNx-induced intermixing in AlInGaAs/InP quantum well through interdiffusion of group III atomsen
dc.typeArticle (peer-reviewed)en
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