Recent advances in the growth of germanium nanowires: synthesis, growth dynamics and morphology control

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dc.contributor.authorO'Regan, Colm
dc.contributor.authorBiswas, Subhajit
dc.contributor.authorPetkov, Nikolay
dc.contributor.authorHolmes, Justin D.
dc.contributor.funderHigher Education Authorityen
dc.contributor.funderIrish Research Council for Science Engineering and Technologyen
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2016-02-10T17:26:25Z
dc.date.available2016-02-10T17:26:25Z
dc.date.issued2013-10-11
dc.date.updated2013-11-29T16:07:02Z
dc.description.abstractOne-dimensional semiconductor nanostructures have been studied in great depth over the past number of decades as potential building blocks in electronic, thermoelectric, optoelectronic, photovoltaic and battery devices. Silicon has been the material of choice in several industries, in particular the semiconductor industry, for the last few decades due to its stable oxide and well documented properties. Recently however, Ge has been proposed as a candidate to replace Si in microelectronic devices due to its high charge carrier mobilities. A number of various ‘bottom-up’ synthetic methodologies have been employed to grow Ge nanowires, including chemical vapour deposition, thermal evaporation, template methods, supercritical fluid synthesis, molecular beam epitaxy and solution phase synthesis. These bottom-up methods afford the opportunity to produce commercial scale quantities of nanowires with controllable lengths, diameters and crystal structure. An understanding of the vapour-liquid-solid (VLS) and vapour-solid-solid (VSS) mechanism by which most Ge nanowires are produced, is key to controlling their growth rate, aspect ratio and morphology. This article highlights the various bottom-up growth methods that have been used to synthesise Ge nanowires over the past 5-6 years, with particular emphasis on the Au/Ge eutectic system and the VLS mechanism. Thermodynamic and kinetic models used to describe Ge nanowire growth and morphology control will also be discussed in detail.en
dc.description.sponsorshipIrish Research Council for Science Engineering and Technology; Science Foundation Ireland (Grants: 09/SIRG/I1621, 06/IN.1/I106, 08/CE/I1432 and 09/IN.1/I2602); Higher Education Authority (Program for Research in Third Level Institutions (2007–2011) via the INSPIRE programme)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationO'REGAN, C., BISWAS, S., PETKOV, N. & HOLMES, J. D. 2014. Recent advances in the growth of germanium nanowires: synthesis, growth dynamics and morphology control. Journal of Materials Chemistry C, 2, 14-33. http://dx.doi.org/10.1039/C3TC31736Fen
dc.identifier.doi10.1039/c3tc31736f
dc.identifier.endpage33en
dc.identifier.issn2050-7526
dc.identifier.issued1en
dc.identifier.journaltitleJournal of Materials Chemistry Cen
dc.identifier.startpage14en
dc.identifier.urihttps://hdl.handle.net/10468/2276
dc.identifier.volume2en
dc.language.isoenen
dc.publisherRoyal Society of Chemistryen
dc.relation.urihttp://pubs.rsc.org/en/content/articlepdf/2014/tc/c3tc31736f
dc.rights© The Royal Society of Chemistry 2014.en
dc.subjectChemical vapour depositionen
dc.subjectGermanium nanowiresen
dc.subjectMicro-electronic devicesen
dc.subjectOne-dimensional semiconductor nanostructuresen
dc.subjectPotential building blocksen
dc.subjectSemiconductor industryen
dc.subjectSolution phase synthesisen
dc.subjectSynthetic methodologyen
dc.subjectNanowiresen
dc.subjectAspect ratioen
dc.subjectEffluent treatmenten
dc.subjectGermaniumen
dc.subjectMicroelectronicsen
dc.subjectMolecular beam epitaxyen
dc.subjectMorphologyen
dc.subjectSemiconductor device manufactureen
dc.subjectSemiconductor devicesen
dc.subjectSupercritical fluidsen
dc.titleRecent advances in the growth of germanium nanowires: synthesis, growth dynamics and morphology controlen
dc.typeArticle (peer-reviewed)en
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