A study of capacitance-voltage curve narrowing effect in capacitive microelectromechanical switches

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dc.contributor.authorOlszewski, Oskar Zbigniew
dc.contributor.authorDuane, Russell
dc.contributor.authorO'Mahony, Conor
dc.contributor.funderEnterprise Ireland
dc.contributor.funderIntel Corporation
dc.contributor.funderEuropean Space Agency
dc.contributor.funderIrish Research Council for Science, Engineering and Technology
dc.date.accessioned2017-07-28T11:47:33Z
dc.date.available2017-07-28T11:47:33Z
dc.date.issued2008
dc.description.abstractIn this letter, we report on the capacitance-voltage (C-V) curve narrowing effect, which occurs in the oxide-based microelectromechanical switches that are subjected to dc bias stress for a prolonged period of time. The narrowing effect for the noncontact dc bias stress condition is shown, which proves that membrane-to-dielectric contact is not needed for narrowing to occur. It is also shown that neither mechanical degradation nor charge trapping due to dielectric conduction or air ionization is solely responsible for the C-V instabilities reported in the literature. (c) 2008 American Institute of Physics (DOI: 10.1063/1.2978159)en
dc.description.sponsorshipIntel Ireland and Enterprise Ireland (through the Innovations Partnership Programme); European Space Agency and Irish Research Council for Science, Engineering and Technology (ESA and IRCSET through the Networking and Partnership Initiative (NPI) funding scheme.)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid94101
dc.identifier.citationOlszewski, Z., Duane, R. and O’Mahony, C. (2008) 'A study of capacitance-voltage curve narrowing effect in capacitive microelectromechanical switches', Applied Physics Letters, 93(9), pp. 094101. doi: 10.1063/1.2978159en
dc.identifier.doi10.1063/1.2978159
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued9
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4367
dc.identifier.volume93
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.2978159
dc.rights© 2008 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Olszewski, Z., Duane, R. and O’Mahony, C. (2008) 'A study of capacitance-voltage curve narrowing effect in capacitive microelectromechanical switches', Applied Physics Letters, 93(9), pp. 094101 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2978159en
dc.subjectRf memsen
dc.subjectDielectricsen
dc.subjectMicroelectromechanical systemsen
dc.subjectIonizationen
dc.subjectIonic conductionen
dc.subjectIon trappingen
dc.titleA study of capacitance-voltage curve narrowing effect in capacitive microelectromechanical switchesen
dc.typeArticle (peer-reviewed)en
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