Monolithic integration of patterned BaTiO3 thin films on Ge wafers

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dc.check.date2019-05-01
dc.check.infoAccess to this article is restricted until 12 months after publication by request of the publisher.en
dc.contributor.authorPonath, Patrick
dc.contributor.authorPosadas, Agham
dc.contributor.authorSchmidt, Michael
dc.contributor.authorKelleher, Anne-Marie
dc.contributor.authorWhite, Mary
dc.contributor.authorO'Connell, Dan
dc.contributor.authorHurley, Paul K.
dc.contributor.authorDuffy, Ray
dc.contributor.authorDemkov, Alexander A.
dc.contributor.funderAir Force Office of Scientific Researchen
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2018-05-24T14:12:28Z
dc.date.available2018-05-24T14:12:28Z
dc.date.issued2018-05
dc.date.updated2018-05-24T13:59:45Z
dc.description.abstractTitanates exhibit electronic properties highly desirable for field effect transistors such as very high permittivity and ferroelectricity. However, the difficulty of chemically etching titanates hinders their commercial use in device manufacturing. Here, the authors report the selective area in finestra growth of highly crystalline BaTiO3 (BTO) within photolithographically defined openings of a sacrificial SiO2 layer on a Ge (001) wafer by molecular beam epitaxy. After the BaTiO3 deposition, the sacrificial SiO2 can be etched away, revealing isolated nanoscale gate stacks circumventing the need to etch the titanate thin film. Reflection high-energy electron diffraction in conjunction with scanning electron microscopy is carried out to confirm the crystallinity of the samples. X-ray diffraction is performed to determine the out-of-plane lattice constant and crystal quality of the BTO film. Electrical measurements are performed on electrically isolated Pt/BaTiO3/SrTiO3/Ge capacitor devices.en
dc.description.sponsorshipAir Force Office of Scientific Research (Grant Nos. FA9550-14-1-0090)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationPonath, P., Posadas, A., Schmidt, M., Kelleher, A.-M., White, M., O'Connell, D., Hurley, P. K., Duffy, R. and Demkov, A. A. (2018) 'Monolithic integration of patterned BaTiO3 thin films on Ge wafers', Journal of Vacuum Science & Technology B, 36(3), 031206 (5pp). doi: 10.1116/1.5026109en
dc.identifier.doi10.1116/1.5026109
dc.identifier.endpage31206-5en
dc.identifier.issn2166-2746
dc.identifier.issued3en
dc.identifier.journaltitleJournal Of Vacuum Science & Technology Ben
dc.identifier.startpage31206-1en
dc.identifier.urihttps://hdl.handle.net/10468/6189
dc.identifier.volume36en
dc.language.isoenen
dc.publisherAmerican Vacuum Society; AIP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Investigator Programme/15/IA/3131/IE/Investigating Emerging 2D Semiconductor Technology/en
dc.relation.urihttps://avs.scitation.org/doi/abs/10.1116/1.5026109
dc.rights© 2018 the authors. Published by the AVS.en
dc.subjectFerroelectricityen
dc.subjectX-ray diffractionen
dc.subjectThin filmsen
dc.subjectEpitaxyen
dc.subjectSemiconductor device designen
dc.subjectElectron diffractionen
dc.titleMonolithic integration of patterned BaTiO3 thin films on Ge wafersen
dc.typeArticle (peer-reviewed)en
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