Excitation-induced energy shifts in the optical gain spectra of InN quantum dots

dc.contributor.authorLorke, M.
dc.contributor.authorSeebeck, J.
dc.contributor.authorGartner, P.
dc.contributor.authorJahnke, F.
dc.contributor.authorSchulz, Stefan
dc.contributor.funderDeutsche Forschungsgemeinschaft
dc.contributor.funderAlexander von Humboldt-Stiftung
dc.contributor.funderIrish Research Council for Science, Engineering and Technology
dc.date.accessioned2017-07-28T11:22:10Z
dc.date.available2017-07-28T11:22:10Z
dc.date.issued2009
dc.description.abstractA microscopic theory for the optical absorption and gain spectra of InN quantum-dot systems is used to study the combined influence of material properties and interaction-induced effects. Atomistic tight-binding calculations for the single-particle properties of the self-assembled quantum-dot and wetting-layer system are used in conjunction with a many-body description of Coulomb interaction and carrier phonon interaction. We analyze the carrier-density and temperature dependence of strong excitation-induced energy shifts of the dipole-allowed quantum-dot transitions.(C) 2009 American Institute of Physics. (10.1063/1.3213543)en
dc.description.sponsorshipDeutsche Forschungsgemeinschaft (Grant No. FOR506); Irish Research Council for Science, Engineering and Technology (IRCSET Embark Initiative)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid81108
dc.identifier.citationLorke, M., Seebeck, J., Gartner, P., Jahnke, F. and Schulz, S. (2009) 'Excitation-induced energy shifts in the optical gain spectra of InN quantum dots', Applied Physics Letters, 95(8), pp. 081108. doi: 10.1063/1.3213543en
dc.identifier.doi10.1063/1.3213543
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued8
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4355
dc.identifier.volume95
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.3213543
dc.rights© 2009 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Lorke, M., Seebeck, J., Gartner, P., Jahnke, F. and Schulz, S. (2009) 'Excitation-induced energy shifts in the optical gain spectra of InN quantum dots', Applied Physics Letters, 95(8), pp. 081108 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3213543en
dc.subjectSpontaneous emissionen
dc.subjectStrained wurtziteen
dc.subjectLasersen
dc.subjectSemiconductorsen
dc.subjectEnhancementen
dc.subjectFIELDen
dc.subjectCarrier densityen
dc.subjectElectron-phonon interactionsen
dc.subjectIII-V semiconductorsen
dc.subjectIndium compoundsen
dc.subjectInfrared spectraen
dc.subjectSelf-assemblyen
dc.subjectSemiconductor quantum dotsen
dc.subjectTight-binding calculationsen
dc.subjectUltraviolet spectraen
dc.subjectVisible spectraen
dc.subjectQuantum dotsen
dc.subjectElectronsen
dc.subjectElectrostaticsen
dc.subjectOptical propertiesen
dc.titleExcitation-induced energy shifts in the optical gain spectra of InN quantum dotsen
dc.typeArticle (peer-reviewed)en
Files
Original bundle
Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
3330.pdf
Size:
314.98 KB
Format:
Adobe Portable Document Format
Description:
Published Version