Characterization of bulk and surface currents in strain-balanced InGaAs quantum-well mesa diodes

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dc.contributor.authorKelleher, Carmel
dc.contributor.authorGinige, Ravin
dc.contributor.authorCorbett, Brian M.
dc.contributor.authorClarke, Gerard
dc.contributor.funderHigher Education Authority
dc.contributor.funderFifth Framework Programme
dc.date.accessioned2017-07-28T13:29:54Z
dc.date.available2017-07-28T13:29:54Z
dc.date.issued2004
dc.description.abstractWe compare the electrical and optical characteristics of mesa diodes based on In0.62Ga0.38As/In0.45Ga0.55As strain-balanced multiple-quantum wells (SB-MQW) with lattice-matched (LM) In0.53Ga0.47As diodes. The dark current density of the SB-MQW devices is at least an order of magnitude lower than the LM devices for voltages >0.4 V. Sidewall recombination current is only measured on SB-MQW diodes when exposed to a damaging plasma. While radiative recombination current dominates in the SB-MQW diodes, it is less than the diffusive current in the LM diodes for the same applied voltage. (C) 2004 American Institute of Physics. (DOI:10.1063/1.1835537)en
dc.description.sponsorshipEuropean Commission (Project No. NNE5-1999-00573); Higher Education Authority (PRTLI fund)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationKelleher, C., Ginige, R., Corbett, B. and Clarke, G. (2004) 'Characterization of bulk and surface currents in strain-balanced InGaAs quantum-well mesa diodes', Applied Physics Letters, 85(24), pp. 6033-6035. doi: 10.1063/1.1835537en
dc.identifier.doi10.1063/1.1835537
dc.identifier.endpage6035
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued24
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage6033
dc.identifier.urihttps://hdl.handle.net/10468/4396
dc.identifier.volume85
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.1835537
dc.rights© 2004 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Kelleher, C., Ginige, R., Corbett, B. and Clarke, G. (2004) 'Characterization of bulk and surface currents in strain-balanced InGaAs quantum-well mesa diodes', Applied Physics Letters, 85(24), pp. 6033-6035 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.1835537en
dc.subjectThermophotovoltaic applicationsen
dc.subjectSolar-cellsen
dc.subjectRecombinationen
dc.subjectMultiple quantum wellsen
dc.subjectDark currentsen
dc.subjectElectric currentsen
dc.subjectCarrier densityen
dc.subjectElectric measurementsen
dc.titleCharacterization of bulk and surface currents in strain-balanced InGaAs quantum-well mesa diodesen
dc.typeArticle (peer-reviewed)en
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