Bismuth self-limiting growth of ultrathin BiFeO3 films
| dc.contributor.author | Deepak, Nitin | |
| dc.contributor.author | Carolan, Patrick B. | |
| dc.contributor.author | Keeney, Lynette | |
| dc.contributor.author | Zhang, Panfeng F. | |
| dc.contributor.author | Pemble, Martyn E. | |
| dc.contributor.author | Whatmore, Roger W. | |
| dc.contributor.funder | Irish Research Council for Science, Engineering and Technology | en |
| dc.contributor.funder | Science Foundation Ireland | en |
| dc.contributor.funder | Higher Education Authority | en |
| dc.date.accessioned | 2019-04-08T11:00:47Z | |
| dc.date.available | 2019-04-08T11:00:47Z | |
| dc.date.issued | 2015-09-11 | |
| dc.date.updated | 2019-03-26T09:11:08Z | |
| dc.description.abstract | Bismuth ferrite (BiFeO3) is a widely studied material, because of its interesting multiferroic properties. Bismuth self-limiting growth of single-phase BiFeO3 (BFO) has previously been achieved using molecular beam epitaxy (MBE), but the growth of BFO by chemical vapor deposition (CVD) has proved to be very challenging, because of the volatile nature of bismuth. The growth window regarding temperature, pressure, and precursor flow rates that will give a pure perovskite BFO phase is normally very small. In this work, we have studied the metal–organic CVD (MOCVD) growth of epitaxial BFO thin films on SrTiO3 substrates and found that by carefully controlling the amount of the iron precursor, Fe(thd)3 (where thd = 2,2,6,6 tetra-methyl-3,5-heptanedionate), we were able to achieve bismuth self-liming growth, for the first time. The effect of the volume of the bismuth and iron precursors injected on the growth of BFO thin films is reported, and it has been found that the phase-pure films can be prepared when the Bi/Fe ratios are between 1.33 and 1.81 under temperature and pressure conditions of 650 °C and 10 mbar, respectively, and where the O2 gas flow was kept constant to 1000 sccm out of a total gas flow of 3000 sccm. Piezoresponse force microscopy (PFM) studies demonstrate the presence of bipolar switching in ultrathin BFO films. | en |
| dc.description.sponsorship | Irish Research Council for Science, Engineering and Technology (International Centre for Graduate Education in micro-& nano-Engineering, ICGEE); Higher Education Authority (HEA Program for Research in Third Level Institutions (2007−2011) via the INSPIRE program) | en |
| dc.description.status | Peer reviewed | en |
| dc.description.version | Accepted Version | en |
| dc.format.mimetype | application/pdf | en |
| dc.identifier.citation | Deepak, N., Carolan, P., Keeney, L., Zhang, P. F., Pemble, M. E. and Whatmore, R. W. (2015) 'Bismuth Self-Limiting Growth of Ultrathin BiFeO3 Films', Chemistry of Materials, 27(19), pp. 6508-6515. doi: 10.1021/acs.chemmater.5b03034 | en |
| dc.identifier.doi | 10.1021/acs.chemmater.5b03034 | en |
| dc.identifier.eissn | 1520-5002 | |
| dc.identifier.endpage | 6515 | en |
| dc.identifier.issn | 0897-4756 | |
| dc.identifier.journaltitle | Chemistry Materials | en |
| dc.identifier.startpage | 6508 | en |
| dc.identifier.uri | https://hdl.handle.net/10468/7724 | |
| dc.identifier.volume | 27 | en |
| dc.language.iso | en | en |
| dc.publisher | American Chemical Society, ACS | en |
| dc.relation.project | info:eu-repo/grantAgreement/SFI/SFI Strategic Research Cluster/07/SRC/I1172/IE/SRC FORME: Functional Oxides and Related Materials for Electronics/ | en |
| dc.relation.project | info:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/11/PI/1117/IE/New Materials and Devices for Optical Applications via the use of Hybrid Technologies: Colloidal Crystallisation and Advanced Thin Film Deposition/ | en |
| dc.relation.uri | https://pubs.acs.org/doi/10.1021/acs.chemmater.5b03034 | |
| dc.rights | © 2015 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Chemistry of Materials after peer review and technical editing by the publisher. To access the final edited and published work see https://dx.doi.org/10.1021/acs.chemmater.5b03034 | en |
| dc.subject | Bismuth ferrite | en |
| dc.subject | BiFeO3 | en |
| dc.subject | Chemical vapor deposition | en |
| dc.subject | Multiferroic tunnel junctions | en |
| dc.subject | Molecular beam method | en |
| dc.subject | Thickness dependence | en |
| dc.subject | Thin films | en |
| dc.subject | Epitaxy | en |
| dc.subject | GaAS | en |
| dc.subject | Property | en |
| dc.subject | PbTiO3 | en |
| dc.subject | Memory | en |
| dc.title | Bismuth self-limiting growth of ultrathin BiFeO3 films | en |
| dc.type | Article (peer-reviewed) | en |
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