Exciton localization in semipolar ( 112¯2) InGaN multiple quantum wells

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dc.contributor.authorDinh, Duc V.
dc.contributor.authorBrunner, Frank
dc.contributor.authorWeyers, Markus
dc.contributor.authorCorbett, Brian M.
dc.contributor.authorParbrook, Peter J.
dc.contributor.funderEuropean Commissionen
dc.contributor.funderSeventh Framework Programmeen
dc.contributor.funderHigher Education Authorityen
dc.date.accessioned2017-06-29T11:16:24Z
dc.date.available2017-06-29T11:16:24Z
dc.date.issued2016-08-04
dc.date.updated2017-06-29T11:01:40Z
dc.description.abstractThe exciton localization in semipolar (112⎯⎯2112¯2) InxGa1−xN (0.13 ≤ x ≤ 0.35) multiple-quantum-well (MQW) structures has been studied by excitation power density and temperature dependent photoluminescence. A strong exciton localization was found in the samples with a linear dependence with In-content and emission energy, consistent with the Stokes-shift values. This strong localization was found to cause a blue-shift of the MQW exciton emission energy at temperature above 100 K, which was found to linearly increase with increasing In-content.en
dc.description.sponsorshipHigher Education Authority (Programme for Research in Third Level Institutions (PRTLI) fourth and fifth cycles.)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationDinh, D. V., Brunner, F., Weyers, M., Corbett, B. and Parbrook, P. J. (2016) 'Exciton localization in semipolar ( 112¯2) InGaN multiple quantum wells', Journal of Applied Physics, 120(5), 055705. doi:10.1063/1.4960348en
dc.identifier.doi10.1063/1.4960348
dc.identifier.endpage55705-5en
dc.identifier.issn0021-8979
dc.identifier.issn1089-7550
dc.identifier.issued5en
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage55705-1en
dc.identifier.urihttps://hdl.handle.net/10468/4203
dc.identifier.volume120en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::NMP/280587/EU/AlGaInN materials on semi-polar templates for yellow emission in solid state lighting applications/ALIGHTen
dc.rights© 2016, AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Journal of Applied Physics 120, 055705 (2016) and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4960348en
dc.subjectMultiple quantum wellsen
dc.subjectPhotoluminescenceen
dc.subjectExcitonsen
dc.subjectIII-V semiconductorsen
dc.subjectSurface morphologyen
dc.titleExciton localization in semipolar ( 112¯2) InGaN multiple quantum wellsen
dc.typeArticle (peer-reviewed)en
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