Wettability and "petal effect" of GaAs native oxides

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dc.contributor.authorGocaliƄska, Agnieszka M.
dc.contributor.authorGradkowski, Kamil
dc.contributor.authorDimastrodonato, Valeria
dc.contributor.authorMereni, L. O.
dc.contributor.authorJuska, Gediminas
dc.contributor.authorHuyet, Guillaume
dc.contributor.authorPelucchi, Emanuele
dc.contributor.funderHigher Education Authority
dc.contributor.funderScience Foundation Ireland
dc.date.accessioned2017-09-20T10:06:34Z
dc.date.available2017-09-20T10:06:34Z
dc.date.issued2011
dc.description.abstractWe discuss unreported transitions of oxidized GaAs surfaces between (super) hydrophilic and hydrophobic states when stored in ambient conditions. Contact angles higher than 90 degrees and high adhesive force were observed for several air-aged epitaxial samples grown under different conditions as well as on epi-ready wafers. Regardless of the morphologies of the surface, superhydrophilicity of oxygen-plasma treated samples was observed, an effect disappearing with storage time. Reproducible hydrophobicity was likewise observed, as expected, after standard HCl surface etching. The relation between surface oxides and hydrophobic/hydrophilic behavior is discussed. (C) 2011 American Institute of Physics. [doi:10.1063/1.3619797]en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid34319
dc.identifier.citationGocalinska, A., Gradkowski, K., Dimastrodonato, V., Mereni, L. O., Juska, G., Huyet, G. and Pelucchi, E. (2011) 'Wettability and “petal effect” of GaAs native oxides', Journal of Applied Physics, 110(3), 034319 (5pp). doi: 10.1063/1.3619797en
dc.identifier.doi10.1063/1.3619797
dc.identifier.endpage5
dc.identifier.issn0021-8979
dc.identifier.issued3
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4735
dc.identifier.volume110
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/10.1063/1.3619797
dc.rights© 2011, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Gocalinska, A., Gradkowski, K., Dimastrodonato, V., Mereni, L. O., Juska, G., Huyet, G. and Pelucchi, E. (2011) 'Wettability and “petal effect” of GaAs native oxides', Journal of Applied Physics, 110(3), 034319 (5pp). doi: 10.1063/1.3619797 and may be found at http://aip.scitation.org/doi/10.1063/1.3619797en
dc.subjectIII-V semiconductorsen
dc.subjectHydrophobic interactionsen
dc.subjectEpitaxyen
dc.subjectSurface morphologyen
dc.subjectOxide surfacesen
dc.titleWettability and "petal effect" of GaAs native oxidesen
dc.typeArticle (peer-reviewed)en
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