Low-threshold room-temperature AlGaAs/GaAs nanowire/single-quantum-well heterostructure laser

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dc.check.date2018-02-06
dc.check.infoAccess to this item is restricted until 12 months after publication by the request of the publisher.en
dc.contributor.authorYan, Xin
dc.contributor.authorWei, Wei
dc.contributor.authorTang, Fengling
dc.contributor.authorWang, Xi
dc.contributor.authorLi, Luying
dc.contributor.funderNational Natural Science Foundation of Chinaen
dc.contributor.funderAir Force Office of Scientific Researchen
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderBeijing Municipal Natural Science Foundationen
dc.contributor.funderBeijing University of Posts and Telecommunicationsen
dc.contributor.funderMinistry of Industry and Information Technology of the People's Republic of Chinaen
dc.date.accessioned2017-02-13T14:27:07Z
dc.date.available2017-02-13T14:27:07Z
dc.date.issued2017-02-06
dc.description.abstractNear-infrared nanowire lasers are promising as ultrasmall, low-consumption light emitters in on-chip optical communications and computing systems. Here, we report on a room-temperature near-infrared nanolaser based on an AlGaAs/GaAs nanowire/single-quantum-well heterostructure grown by Au-catalyzed metal organic chemical vapor deposition. When subjects to pulsed optical excitation, the nanowire exhibits lasing, with a low threshold of 600 W/cm2, a narrow linewidth of 0.39 nm, and a high Q factor of 2000 at low temperature. Lasing is observed up to 300 K, with an ultrasmall temperature dependent wavelength shift of 0.045 nm/K. This work paves the way towards ultrasmall, low-consumption, and high-temperature-stability near-infrared nanolasers.en
dc.description.sponsorshipNational Natural Science Foundation of China (61504010, 61376019, and 61511130045); Air Force Office of Scientific Research (European Office of Aerospace Research and Development (FA9550-14-1-0204)); Science Foundation Ireland (12/IP/1658), Beijing Natural Science Foundation (4142038); Beijing University of Posts and Telecommunications (the Fund of State Key Laboratory of Information Photonics and Optical Communications); Ministry of Industry and Information Technology of the People's Republic of Chinaen
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationYan, X., Wei, W., Tang, F., Wang, X., Li, L., Zhang, X. and Ren, X. (2017) 'Low-threshold room-temperature AlGaAs/GaAs nanowire/single-quantum-well heterostructure laser', Applied Physics Letters, 110(6), pp. 061104. doi: 10.1063/1.4975780en
dc.identifier.doi10.1063/1.4975780
dc.identifier.endpage061104-5en
dc.identifier.issn0003-6951
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage061104-1en
dc.identifier.urihttps://hdl.handle.net/10468/3621
dc.identifier.volume110en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.rights© 2017, AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Appl. Phys. Lett. 110, 061104 (2017) and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4975780en
dc.subjectAluminium compoundsen
dc.subjectGallium arsenideen
dc.subjectIII-V semiconductorsen
dc.subjectMOCVDen
dc.subjectNanophotonicsen
dc.subjectNanowiresen
dc.subjectQ-factoren
dc.subjectQuantum well lasersen
dc.subjectSemiconductor heterojunctionsen
dc.subjectQuantum wellsen
dc.subjectLinewidthsen
dc.subjectScanning electron microscopyen
dc.subjectHeterojunctionsen
dc.subjectPhotoluminescenceen
dc.titleLow-threshold room-temperature AlGaAs/GaAs nanowire/single-quantum-well heterostructure laseren
dc.typeArticle (peer-reviewed)en
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