Design guidelines for edge-coupled waveguide unitravelling carrier photodiodes with improved bandwidth

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dc.contributor.authorRazavi, Pedram
dc.contributor.authorSchulz, Stefan
dc.contributor.authorRoycroft, Brendan
dc.contributor.authorCorbett, Brian
dc.contributor.authorO'Reilly, Eoin P.
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2021-01-07T11:35:14Z
dc.date.available2021-01-07T11:35:14Z
dc.date.issued2019-05-21
dc.date.updated2021-01-07T11:16:27Z
dc.description.abstractThis study presents experimental and simulation results for edge-coupled waveguide unitravelling-carrier (UTC) photodiodes based on an InGaAs/InP heterostructure. Experimental results are used to calibrate the numerical device simulator. The authors study how different aspects of the UTC photodiode epistructure and contacts impact on the overall device bandwidth, calculating the photoresponse for different structural parameters and doping concentration profiles. The effect of these parameters on the 3-dB cut-off frequency is studied, and design guidelines for UTC photodiodes with improved performance are presented. The UTC photodiode simulated using authors' design guidelines has a 3 dB cut-off frequency of 49 GHz, a factor of 2 larger than the 25 GHz cut-off of the fabricated UTC photodiode.en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationRazavi, P., Schulz, S., Roycroft, B., Corbett, B. and O'Reilly, E. P. (2019) 'Design guidelines for edge-coupled waveguide unitravelling carrier photodiodes with improved bandwidth', IET Optoelectronics, 13(6), pp. 267-272. doi: 10.1049/iet-opt.2018.5171en
dc.identifier.doi10.1049/iet-opt.2018.5171en
dc.identifier.eissn1751-8776
dc.identifier.endpage272en
dc.identifier.issn1751-8768
dc.identifier.issued6en
dc.identifier.journaltitleIET Optoelectronicsen
dc.identifier.startpage267en
dc.identifier.urihttps://hdl.handle.net/10468/10869
dc.identifier.volume13en
dc.language.isoenen
dc.publisherInstitution of Engineering and Technology (IET)en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Research Centres/12/RC/2276/IE/I-PIC Irish Photonic Integration Research Centre/en
dc.rights© 2019, The Institution of Engineering and Technology. This paper is a postprint of a paper submitted to and accepted for publication in IET Optoelectronics, and is subject to Institution of Engineering and Technology Copyright. The copy of record is available at IET Digital Library: https://digital-library.theiet.org/content/journals/10.1049/iet-opt.2018.5171en
dc.subjectPhotodiodesen
dc.subjectUnitravelling-carrieren
dc.subjectUTCen
dc.subjectInGaAs/InP heterostructureen
dc.subjectPhotoresponseen
dc.subject3-dB cut-off frequencyen
dc.subjectUTC photodiodesen
dc.subjectEdge-coupled waveguide unitravelling-carrieren
dc.titleDesign guidelines for edge-coupled waveguide unitravelling carrier photodiodes with improved bandwidthen
dc.typeArticle (peer-reviewed)en
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