Competitive carrier interactions influencing the emission dynamics of GaAsSb-capped InAs quantum dots

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dc.contributor.authorPavarelli, Nicola
dc.contributor.authorOchalski, Tomasz J.
dc.contributor.authorLiu, H. Y.
dc.contributor.authorGradkowski, Kamil
dc.contributor.authorSchmidt, Michael
dc.contributor.authorWilliams, David P.
dc.contributor.authorMowbray, D. J.
dc.contributor.authorHuyet, Guillaume
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderEnterprise Ireland
dc.contributor.funderHigher Education Authority
dc.date.accessioned2017-07-28T09:23:24Z
dc.date.available2017-07-28T09:23:24Z
dc.date.issued2012
dc.description.abstractThe optical properties of InAs/GaAs quantum dots capped with a GaAsSb quantum well are investigated by means of power-dependent and time-resolved photoluminescence. The structure exhibits the coexistence of a type-I ground state and few type-II excited states, the latter characterized by a simultaneous carrier density shift of the peak position and wavelength-dependent carrier lifetimes. Complex emission dynamics are observed under a high-power excitation regime, with the different states undergoing shifts during specific phases of the measurement. These features are satisfactorily explained in terms of band structure and energy level modifications induced by two competitive carrier interactions inside the structure. (C) 2012 American Institute of Physics. (http://dx.doi.org/10.1063/1.4769431)en
dc.description.sponsorshipScience Foundation Ireland (07/IN.1/I929, 09/SIRG/I1621); Enterprise Ireland (RE/2007/006); Higher Education Authority (INSPIRE programme under the HEA PRTLI Cycle 4, National Development Plan)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid231109
dc.identifier.citationPavarelli, N., Ochalski, T. J., Liu, H. Y., Gradkowski, K., Schmidt, M., Williams, D. P., Mowbray, D. J. and Huyet, G. (2012) 'Competitive carrier interactions influencing the emission dynamics of GaAsSb-capped InAs quantum dots', Applied Physics Letters, 101(23), pp. 231109. doi: 10.1063/1.4769431en
dc.identifier.doi10.1063/1.4769431
dc.identifier.endpage4
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued23
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4293
dc.identifier.volume101
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.4769431
dc.rights© 2012 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Pavarelli, N., Ochalski, T. J., Liu, H. Y., Gradkowski, K., Schmidt, M., Williams, D. P., Mowbray, D. J. and Huyet, G. (2012) 'Competitive carrier interactions influencing the emission dynamics of GaAsSb-capped InAs quantum dots', Applied Physics Letters, 101(23), pp. 231109 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4769431en
dc.subjectLight-emissionen
dc.subjectLayeren
dc.subjectQuantum dotsen
dc.subjectQuantum wellsen
dc.subjectIII-V semiconductorsen
dc.subjectPhotoluminescenceen
dc.subjectElectronsen
dc.titleCompetitive carrier interactions influencing the emission dynamics of GaAsSb-capped InAs quantum dotsen
dc.typeArticle (peer-reviewed)en
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