Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing

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dc.contributor.authorCabrera, W.
dc.contributor.authorBrennan, B.
dc.contributor.authorDong, H.
dc.contributor.authorO'Regan, Terrance P.
dc.contributor.authorPovey, Ian M.
dc.contributor.authorMonaghan, Scott
dc.contributor.authorO'Connor, Éamon
dc.contributor.authorHurley, Paul K.
dc.contributor.authorWallace, R. M.
dc.contributor.authorChabal, Y. J.
dc.contributor.funderNational Science Foundation
dc.contributor.funderScience Foundation Ireland
dc.date.accessioned2017-07-25T14:16:24Z
dc.date.available2017-07-25T14:16:24Z
dc.date.issued2014
dc.description.abstractDiffusion of indium through HfO2 after post deposition annealing in N-2 or forming gas environments is observed in HfO2/In0.53Ga0.47As stacks by low energy ion scattering and X-ray photo electron spectroscopy and found to be consistent with changes in interface layer thickness observed by transmission electron microscopy. Prior to post processing, arsenic oxide is detected at the surface of atomic layer deposition-grown HfO2 and is desorbed upon annealing at 350 degrees C. Reduction of the interfacial layer thickness and potential densification of HfO2, resulting from indium diffusion upon annealing, is confirmed by an increase in capacitance. (C) 2014 AIP Publishing LLC.en
dc.description.sponsorshipNational Science Foundation (U.S. -Ireland RD Partnership (NSF-ECCS-0925844), NSF (CHE 1300180)); Science Foundation Ireland (Grant No. 09/IN.1/I2633)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid11601
dc.identifier.citationCabrera, W., Brennan, B., Dong, H., O'Regan, T. P., Povey, I. M., Monaghan, S., O'Connor, É., Hurley, P. K., Wallace, R. M. and Chabal, Y. J. (2014) 'Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing', Applied Physics Letters, 104(1), pp. 011601. doi: 10.1063/1.4860960en
dc.identifier.doi10.1063/1.4860960
dc.identifier.endpage5
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued1
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttp://hdl.handle.net/10468/4264
dc.identifier.volume104
dc.internal.IRISemailaddressian.povey@tyndall.ieen
dc.internal.authorcontactotherIan Povey, Tyndall National Institute, University College Cork, Cork, Ireland +353-21-234-6076, Email: ian.povey@tyndall.ieen
dc.internal.availabilityFull text availableen
dc.internal.wokidWOS:000329838800016
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.4860960
dc.rights© 2014 AIP Publishing LLC.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Cabrera, W., Brennan, B., Dong, H., O'Regan, T. P., Povey, I. M., Monaghan, S., O'Connor, É., Hurley, P. K., Wallace, R. M. and Chabal, Y. J. (2014) 'Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing', Applied Physics Letters, 104(1), pp. 011601 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4860960en
dc.subjectEnergy ion-scatteringen
dc.subjectGate dielectricsen
dc.subjectGaasen
dc.subjectSpectroscopyen
dc.subjectDesorption; Hfo2en
dc.subjectX-ray photoelectron spectroscopyen
dc.subjectIII-V semiconductorsInterface diffusionen
dc.subjectAtomic layer depositionen
dc.subjectChemical interdiffusionen
dc.titleDiffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealingen
dc.typeArticle (peer-reviewed)en
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