Insight into the impact of atomic- and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m-plane freestanding GaN substrates

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dc.contributor.authorTang, Fengzai
dc.contributor.authorZhu, Tongtong
dc.contributor.authorFu, Wai-Yuan
dc.contributor.authorOehler, Fabrice
dc.contributor.authorZhang, Siyuan
dc.contributor.authorGriffiths, James T.
dc.contributor.authorHumphreys, Colin
dc.contributor.authorMartin, Tomas L.
dc.contributor.authorBagot, Paul A. J.
dc.contributor.authorMoody, Michael P.
dc.contributor.authorPatra, Saroj K.
dc.contributor.authorSchulz, Stefan
dc.contributor.authorDawson, Philip
dc.contributor.authorChurch, Stephen
dc.contributor.authorJacobs, Janet
dc.contributor.authorOliver, Rachel A.
dc.contributor.funderEuropean Research Councilen
dc.contributor.funderSeventh Framework Programmeen
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderEngineering and Physical Sciences Research Councilen
dc.date.accessioned2019-08-29T14:54:04Z
dc.date.available2019-08-29T14:54:04Z
dc.date.issued2019-06-11
dc.date.updated2019-08-29T14:19:33Z
dc.description.abstractWe investigate the atomic scale structure of m-plane InGaN quantum wells grown on bulk m-plane GaN templates and reveal that as the indium content increases there is an increased tendency for nonrandom clustering of indium atoms to occur. Based on the atom probe tomography data used to reveal this clustering, we develop a k · p model that takes these features into account and links the observed nanostructure to the optical properties of the quantum wells. The calculations show that electrons and holes tend to colocalize at indium clusters. The transition energies between the electron and hole states are strongly affected by the shape and size of the clusters. Hence, clustering contributes to the very large line widths observed in the experimental low temperature photoluminescence spectra. Also, the emission from m-plane InGaN quantum wells is strongly linearly polarized. Clustering does not alter the theoretically predicted polarization properties, even when the shape of the cluster is strongly asymmetric. Overall, however, we show that the presence of clustering does impact the optical properties, illustrating the importance of careful characterization of the nanoscale structure of m-plane InGaN quantum wells and that atom probe tomography is a useful and important tool to address this problem.en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid225704en
dc.identifier.citationTang, F., Zhu, T., Fu, W.-Y., Oehler, F., Zhang, S., Griffiths, J. T., Humphreys, C., Martin, T. L., Bagot, P. A. J., Moody, M. P., Patra, S. K., Schulz, S., Dawson, P., Church, S., Jacobs, J. and Oliver, R. A. (2019) 'Insight into the impact of atomic- and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m-plane freestanding GaN substrates', Journal of Applied Physics, 125(22), 225704, (13 pp). doi: 10.1063/1.5097411en
dc.identifier.doi10.1063/1.5097411en
dc.identifier.eissn1089-7550
dc.identifier.endpage13en
dc.identifier.issn0021-8979
dc.identifier.issued22en
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/8415
dc.identifier.volume125en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP2::ERC/279361/EU/A multi-microscopy approach to the characterisation of Nitride semiconductors (MACONS)/MACONSen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Starting Investigator Research Grant (SIRG)/13/SIRG/2210/IE/Shaping the electronic and optical properties of non- and semi-polar nitride-based semiconductor nanostructures/en
dc.relation.projectinfo:eu-repo/grantAgreement/RCUK/EPSRC/EP/H047816/1/GB/Materials World Network to Optimize the Growth of InGaN Quantum Dots within High Quality Optical Micro-Cavities/en
dc.relation.projectinfo:eu-repo/grantAgreement/RCUK/EPSRC/EP/J001627/1/GB/Study of semi-polar and non-polar nitride based structures for opto-electronic device applications/en
dc.relation.urihttps://aip.scitation.org/doi/abs/10.1063/1.5097411
dc.rights© 2019 Author(s). Published under license by AIP Publishing.en
dc.subjectNanostructuresen
dc.subjectOptical propertiesen
dc.subjectQuantum wellsen
dc.subjectSemiconductorsen
dc.subjectSemiconductor quantum wellsen
dc.subjectAtomsen
dc.subjectGallium nitrideen
dc.subjectIII-V semiconductorsen
dc.subjectIndiumen
dc.subjectNanotechnologyen
dc.subjectOptical propertiesen
dc.subjectPhotoluminescenceen
dc.subjectPolarizationen
dc.subjectProbesen
dc.subjectSemiconductor alloysen
dc.subjectTemperatureen
dc.titleInsight into the impact of atomic- and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m-plane freestanding GaN substratesen
dc.typeArticle (peer-reviewed)en
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