Reduction of threading dislocation density in top-down fabricated GaN nanocolumns via their lateral overgrowth by MOCVD

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dc.contributor.authorZubialevich, Vitaly Z.
dc.contributor.authorMcLaren, Mathew
dc.contributor.authorPampili, Pietro
dc.contributor.authorShen, John
dc.contributor.authorArredondo-Arechavala, Miryam
dc.contributor.authorParbrook, Peter J.
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderHigher Education Authorityen
dc.contributor.funderDepartment for the Economy, Northern Irelanden
dc.contributor.funderNational Science Foundationen
dc.date.accessioned2020-01-21T09:47:09Z
dc.date.available2020-01-21T09:47:09Z
dc.date.issued2020-01-13
dc.date.updated2020-01-21T09:32:43Z
dc.description.abstractReduction of threading dislocation density in top-down fabricated GaN nanocolumns (NCs) via their successive lateral shrinkage by anisotropic wet etch and lateral overgrowth by metalorganic chemical vapor deposition is studied by transmission electron microscopy. The fabrication process involves a combination of dry and wet etches to produce NC arrays of a low fill factor (<5%), which are then annealed and laterally overgrown to increase the array fill factor to around 20%–30%. The resulting NC arrays show a reduction in threading dislocation density of at least 25 times, allowing for the reduction in material volume due to the array fill factor, with dislocations being observed to bend into the voids between NCs during the overgrowth process.en
dc.description.sponsorshipHigher Education Authority (Programme for Research in Third Level Institutions Cycles 4 and 5 via the INSPIRE and TYFFANI projects); Department for the Economy, Northern Ireland (U.S.-Ireland R&D Partnership Programme Grant No. USI-058); National Science Foundation (Grant No. EECS-1407540); Science Foundation Ireland (Grant No. SFI-18/TIDA/6066)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid25306en
dc.identifier.citationZubialevich, V. Z., McLaren, M., Pampili, P., Shen, J., Arredondo-Arechavala, M. and Parbrook, P. J. (2020) 'Reduction of threading dislocation density in top-down fabricated GaN nanocolumns via their lateral overgrowth by MOCVD', Journal of Applied Physics, 127(2), 25306 (7pp). doi: 10.1063/1.5110602en
dc.identifier.doi10.1063/1.5110602en
dc.identifier.eissn1089-7550
dc.identifier.endpage7en
dc.identifier.issn0021-8979
dc.identifier.issued2en
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/9538
dc.identifier.volume127en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI US Ireland R&D Partnership/13/US/I2860/IE/US-Ireland Collaborative Research on Nano-GaN Power Electronic Devices/en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Stokes Professorship & Lectureship Programme/07/EN/E001A/IE/Peter Parbrook/en
dc.relation.urihttps://aip.scitation.org/doi/abs/10.1063/1.5110602
dc.rights© 2020, the Authors. Published under license by AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and AIP Publishing. This article appeared as Zubialevich, V. Z., McLaren, M., Pampili, P., Shen, J., Arredondo-Arechavala, M. and Parbrook, P. J. (2020) 'Reduction of threading dislocation density in top-down fabricated GaN nanocolumns via their lateral overgrowth by MOCVD', Journal of Applied Physics, 127(2), 25306 (7pp), doi: 10.1063/1.5110602and may be found at https://aip.scitation.org/doi/full/10.1063/1.5110602en
dc.subjectThreading dislocation densityen
dc.subjectSuccessive lateral shrinkageen
dc.subjectAnisotropic wet etchen
dc.subjectLateral overgrowthen
dc.subjectMetalorganic chemical vapor depositionen
dc.subjectTransmission electron microscopyen
dc.subjectTop-down fabricated GaN nanocolumnsen
dc.subjectNCen
dc.titleReduction of threading dislocation density in top-down fabricated GaN nanocolumns via their lateral overgrowth by MOCVDen
dc.typeArticle (peer-reviewed)en
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