Precursor concentration and substrate effects on high rate dip-coated vanadium oxide thin films.

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dc.contributor.authorGlynn, Colm
dc.contributor.authorAureau, Damien
dc.contributor.authorO'Hanlon, Sally
dc.contributor.authorDaly, Luke
dc.contributor.authorGeaney, Hugh
dc.contributor.authorCollins, Gillian
dc.contributor.authorEtcheberry, Arnaud
dc.contributor.authorO'Dwyer, Colm
dc.contributor.funderIrish Research Councilen
dc.contributor.funderUniversity College Corken
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2018-06-12T14:33:52Z
dc.date.available2018-06-12T14:33:52Z
dc.date.issued2015-05
dc.date.updated2018-06-11T21:34:48Z
dc.description.abstractUniform thin films of vanadium pentoxide were dip-coated from a high-concentration vanadium oxytriisopropoxide precursor which is shown to be resistant to the dewetting processes which can form surface pinhole defects. Through appropriate withdrawal speed choice, the thin films have a smooth uniform surface morphology with a low rms roughness of <1 nm in both their amorphous and crystallized states. The structure of the thin films follows that of bulk vanadium pentoxide but in a nanostructured form. The deposition methods shown can be applied to prepare thin films upon a variety of different substrates and other alkoxide based metal oxide materials.en
dc.description.sponsorshipIrish Research Council (award RS/2011/797); University College Cork (UCC Strategic Research Fund); Science Foundation Ireland (National Access Programme (NAP 417))en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationGlynn, C., Aureau, D., O'Hanlon, S., Daly, L., Geaney, H., Collins, G., Etcheberry, A. and O'Dwyer, C. (2015) 'Precursor Concentration and Substrate Effects on High Rate Dip-Coated Vanadium Oxide Thin Films', ECS Transactions, 64(42), pp. 1-9. doi: 10.1149/06442.0001ecsten
dc.identifier.doi10.1149/06442.0001ecst
dc.identifier.endpage9en
dc.identifier.issn1938-5862
dc.identifier.journaltitleECS Transactionsen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/6284
dc.identifier.volume64en
dc.language.isoenen
dc.publisherElectrochemical Societyen
dc.relation.urihttp://ecst.ecsdl.org/content/64/42/1.abstract
dc.rights© 2015 ECS - The Electrochemical Societyen
dc.subjectFilmsen
dc.subjectThin filmsen
dc.subjectDeposition methodsen
dc.subjectDewetting processen
dc.subjectDifferent substratesen
dc.subjectMetal oxide materialsen
dc.subjectPrecursor concentrationen
dc.subjectSubstrate effectsen
dc.subjectVanadium oxide thin filmsen
dc.subjectVanadium pentoxideen
dc.subjectAmorphous filmsen
dc.subjectDepositionen
dc.subjectMetalsen
dc.subjectOxide filmsen
dc.subjectPhotonicsen
dc.subjectSubstratesen
dc.subjectSurface defectsen
dc.subjectVanadiumen
dc.subjectVanadium compoundsen
dc.titlePrecursor concentration and substrate effects on high rate dip-coated vanadium oxide thin films.en
dc.typeArticle (peer-reviewed)en
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