Fully CMOS-compatible top-down fabrication of sub-50 nm silicon nanowire sensing devices

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dc.contributor.authorGeorgiev, Yordan M.
dc.contributor.authorPetkov, Nikolay
dc.contributor.authorMcCarthy, Brendan
dc.contributor.authorYu, Ran
dc.contributor.authorDjara, Vladimir
dc.contributor.authorO'Connell, Dan
dc.contributor.authorLotty, Olan
dc.contributor.authorNightingale, Adrian M.
dc.contributor.authorThamsumet, Nuchutha
dc.contributor.authorDeMello, John C.
dc.contributor.authorBlake, Alan
dc.contributor.authorDas, Samaresh
dc.contributor.authorHolmes, Justin D.
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderEuropean Commissionen
dc.date.accessioned2016-02-10T17:18:04Z
dc.date.available2016-02-10T17:18:04Z
dc.date.issued2014-01-07
dc.date.updated2014-06-20T12:49:57Z
dc.description.abstractThis article reports the fabrication of sub-50 nm field effect transistor (FET)-type silicon (Si) nanowire (Si NW) chemical and biological sensing devices with a junctionless architecture, as well as on the initial characterisation of their electrical and sensing performance. The devices were fabricated using a fully complementary metal-oxide-semiconductor (CMOS)-compatible top-down process on silicon-on-insulator (SOI) wafers. The fabrication process was mainly based on high-resolution electron beam lithography (EBL) and reactive ion etching (RIE) but also included photolithography (mix-and-match lithography), thin film deposition by electron beam evaporation, lift-off, thermal annealing and wet etching. The sensing performance of a matrix of nanowire devices, i.e. containing 1, 3 and 20 NWs with lengths of 0.5, 1 and 10 μm was examined. Each element of the matrix also contained five devices with different NW widths: 10, 20, 30, and 50 nm and 5 μm (a Si belt reference device). Electrical characterisation of the devices showed excellent performance as backgated junctionless nanowire transistors (JNTs): high on-currents in the range of 1-10 μA and high ratios between the on-state and off-state currents (I on/Ioff) of 6-7 orders of magnitude. In addition, the results of ionic strength sensing experiments demonstrate the very good sensing capabilities of these devices. To the best of our knowledge, these nanowire sensors are among the smallest top-down fabricated Si NW devices reported to date.en
dc.description.sponsorshipEuropean Commission (EU 7th Framework Programme under the SiNAPS project (no. 257856)); Science Foundation Ireland (SFI Grant no. 09/IN.1/I2602)en
dc.description.statusPeer revieweden
dc.description.versionSubmitted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationGEORGIEV, Y. M., PETKOV, N., MCCARTHY, B., YU, R., DJARA, V., O’CONNELL, D., LOTTY, O., NIGHTINGALE, A. M., THAMSUMET, N., DEMELLO, J. C., BLAKE, A., DAS, S. & HOLMES, J. D. 2014. Fully CMOS-compatible top-down fabrication of sub-50 nm silicon nanowire sensing devices. Microelectronic Engineering, 118, 47-53. http://www.sciencedirect.com/science/article/pii/S016793171300734Xen
dc.identifier.doi10.1016/j.mee.2013.12.031
dc.identifier.endpage53en
dc.identifier.issn0167-9317
dc.identifier.journaltitleMicroelectronic Engineeringen
dc.identifier.startpage47en
dc.identifier.urihttps://hdl.handle.net/10468/2274
dc.identifier.volume118en
dc.language.isoenen
dc.publisherElsevieren
dc.relation.urihttp://www.sciencedirect.com/science/article/pii/S016793171300734X
dc.rights© 2014 Elsevier B.V. This submitted manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/ To access the published work, see http://dx.doi.org/10.1016/j.mee.2013.12.031en
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.subjectSilicon nanowire sensoren
dc.subjectField effect transistoren
dc.subjectJunctionless nanowire transistoren
dc.subjectTop-down nanofabricationen
dc.subjectElectron beam lithographyen
dc.subjectHSQen
dc.subjectFabricationen
dc.subjectIonic strengthen
dc.subjectMOS devicesen
dc.subjectNanosensorsen
dc.subjectNanowiresen
dc.subjectPhotolithographyen
dc.subjectChemical and biological sensingen
dc.subjectComplementary metal oxide semiconductorsen
dc.subjectElectrical characterisationen
dc.subjectHigh-resolution electron beam lithographen
dc.subjectNanowire transistorsen
dc.subjectSilicon nanowiresen
dc.subjectSilicon wafersen
dc.titleFully CMOS-compatible top-down fabrication of sub-50 nm silicon nanowire sensing devicesen
dc.typeArticle (peer-reviewed)en
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