dc.contributor.author	Kennedy, Noel
dc.contributor.author	Duffy, Ray
dc.contributor.author	Eaton, Luke
dc.contributor.author	Garvey, Shane
dc.contributor.author	Connolly, James
dc.contributor.author	Hatem, Chris
dc.contributor.author	Holmes, Justin D.
dc.contributor.author	Long, Brenda
dc.contributor.funder	Enterprise Ireland	en
dc.contributor.funder	European Regional Development Fund	en
dc.date.accessioned	2018-08-30T08:56:35Z
dc.date.available	2018-08-30T08:56:35Z
dc.date.issued	2018-08-06
dc.date.updated	2018-08-24T13:30:57Z
dc.description.abstract	This paper details the application of phosphorus monolayer doping of silicon on insulator substrates. There have been no previous publications dedicated to the topic of MLD on SOI, which allows for the impact of reduced substrate dimensions to be probed. The doping was done through functionalization of the substrates with chemically bound allyldiphenylphosphine dopant molecules. Following functionalization, the samples were capped and annealed to enable the diffusion of dopant atoms into the substrate and their activation. Electrical and material characterisation was carried out to determine the impact of MLD on surface quality and activation results produced by the process. MLD has proven to be highly applicable to SOI substrates producing doping levels in excess of 1 × 1019 cm−3 with minimal impact on surface quality. Hall effect data proved that reducing SOI dimensions from 66 to 13 nm lead to an increase in carrier concentration values due to the reduced volume available to the dopant for diffusion. Dopant trapping was found at both Si–SiO2 interfaces and will be problematic when attempting to reach doping levels achieved by rival techniques.	en
dc.description.sponsorship	Enterprise Ireland (project IP-2015-0368); European Regional Development Fund (ERDF under Ireland’s European Structural and Investment Funds Programmes 2014–2020)	en
dc.description.status	Peer reviewed	en
dc.description.version	Published Version	en
dc.format.mimetype	application/pdf	en
dc.identifier.citation	Kennedy, N., Duffy, R., Eaton, L., O'Connell, D., Monaghan, S., Garvey, S., Connolly, J.,Hatem, C., Holmes, J. D. and Long, B. (2018) 'Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates', Beilstein Journal of Nanotechnology, 9, pp. 2106-2113. doi: 10.3762/bjnano.9.199	en
dc.identifier.doi	10.3762/bjnano.9.199
dc.identifier.endpage	2113	en
dc.identifier.issn	2190-4286
dc.identifier.journaltitle	Beilstein Journal of Nanotechnology	en
dc.identifier.startpage	2106	en
dc.identifier.uri	https://hdl.handle.net/10468/6686
dc.identifier.volume	9	en
dc.language.iso	en	en
dc.publisher	Beilstein-Institut	en
dc.relation.uri	https://www.beilstein-journals.org/bjnano/content/pdf/2190-4286-9-199.pdf
dc.rights	© 2018 Kennedy et al.; licensee Beilstein-Institut. This is an Open Access article under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0). Please note that the reuse, redistribution and reproduction in particular requires that the authors and source are credited. The license is subject to the Beilstein Journal of Nanotechnology terms and conditions: (https://www.beilstein-journals.org/bjnano) The definitive version of this article is the electronic one which can be found at: doi:10.3762/bjnano.9.199	en
dc.rights.uri	http://creativecommons.org/licenses/by/4.0	en
dc.subject	CMOS	en
dc.subject	Doping	en
dc.subject	Monolayer	en
dc.subject	Silicon	en
dc.subject	Silicon on insulator (SOI)	en
dc.title	Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates	en
dc.type	Article (peer-reviewed)	en

Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates

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