Porous GaN and high-k MgO-GaN MOS diode layers grown in a single step on silicon

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dc.contributor.authorBilousov, Oleksandr V.
dc.contributor.authorCarvajal, Joan J.
dc.contributor.authorVilalta-Clemente, A.
dc.contributor.authorRuterana, P.
dc.contributor.authorDiaz, Francesc
dc.contributor.authorAguilo, Magdalena
dc.contributor.authorO'Dwyer, Colm
dc.contributor.funderSeventh Framework Programmeen
dc.contributor.funderSixth Framework Programmeen
dc.contributor.funderUniversity College Corken
dc.contributor.funderIrish Research Councilen
dc.contributor.funderGeneralitat de Catalunyaen
dc.date.accessioned2018-05-15T15:38:40Z
dc.date.available2018-05-15T15:38:40Z
dc.date.issued2014-01-07
dc.date.updated2018-05-03T11:21:25Z
dc.description.abstractPorous GaN polycrystalline layers with n-type conduction characteristics were catalytically grown from Mg films formed by decomposition of a Mg2N3 precursor typically employed for activating p-type conduction in GaN. After being exposed to oxygen, the Mg film oxidized to a polycrystalline high-κ oxide between the ohmic alloy interlayer contact and the porous GaN, while maintaining a clean interface. Electrical measurements on devices coupled to composition analysis and electron microscopy of the component layers confirm that a MOS-type porous GaN diode on silicon can be formed by chemical vapor deposition in a single growth regime.en
dc.description.sponsorshipIrish Research Council (New Foundations Award); University College Cork (UCC Strategic Research Fund); Generalitat de Catalunya (Catalan Authority under Project 2009SGR235); Spansh Government ( Projects MAT2011-29255-C02-02 and TEC2010-21574-C02)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationBilousov, O. V., Carvajal, J. J., Vilalta-Clemente, A., Ruterana, P., Díaz, F., Aguiló, M. and O'Dwyer, C. (2014) 'Porous GaN and High-κ MgO–GaN MOS Diode Layers Grown in a Single Step on Silicon', Chemistry of Materials, 26(2), pp. 1243-1249. doi: 10.1021/cm4037023en
dc.identifier.doi10.1021/cm4037023
dc.identifier.endpage1249en
dc.identifier.issn0897-4756
dc.identifier.issued2en
dc.identifier.journaltitleChemistry of Materialsen
dc.identifier.startpage1243en
dc.identifier.urihttps://hdl.handle.net/10468/6117
dc.identifier.volume26en
dc.language.isoenen
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::SPA/263044/EU/Small debris removal by laser illumination and complementary technologie/CLEANSPACEen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP3::PEOPLE/213238/EU/High quality Material and intrinsic Properties of InN and indium rich Nitride Alloys - (The RAINBOW ITN)/RAINBOWen
dc.relation.urihttp://pubs.acs.org/doi/abs/10.1021/cm4037023
dc.rights© 2014 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Chemistry of Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/abs/10.1021/cm4037023.en
dc.subjectPorous siliconen
dc.subjectChemical vapor depositionen
dc.subjectGallium nitrideen
dc.subjectInterfaces (materials)en
dc.subjectMOS devicesen
dc.subjectSemiconducting siliconen
dc.subjectSiliconen
dc.subjectComposition analysisen
dc.subjectElectrical measurementen
dc.subjectGrowth regimeen
dc.subjectN-type conductionen
dc.subjectP-Type conductionen
dc.subjectPolycrystallineen
dc.subjectPolycrystalline layersen
dc.subjectSingle-stepen
dc.titlePorous GaN and high-k MgO-GaN MOS diode layers grown in a single step on siliconen
dc.typeArticle (peer-reviewed)en
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