High-power single transverse and polarization mode VCSEL for silicon photonics integration

dc.contributor.authorHaglund, Erik
dc.contributor.authorJahed, Mehdi
dc.contributor.authorGustavsson, Johan S.
dc.contributor.authorLarsson, Anders
dc.contributor.authorGoyvaerts, Jeroen
dc.contributor.authorBaets, Roel
dc.contributor.authorRoelkens, Gunther
dc.contributor.authorRensing, Marc
dc.contributor.authorO'Brien, Peter A.
dc.contributor.funderHorizon 2020en
dc.contributor.funderSvenska Forskningsrådet Formasen
dc.contributor.funderStiftelsen för Miljöstrategisk Forskningen
dc.date.accessioned2019-09-17T14:25:03Z
dc.date.available2019-09-17T14:25:03Z
dc.date.issued2019-06-20
dc.description.abstractWe demonstrate a 6.5 mW single transverse and polarization mode GaAs-based oxide-confined VCSEL at 850 nm. High power is enabled by a relatively large oxide aperture and an epitaxial design for low resistance, low optical loss, and high slope efficiency VCSELs. With the oxide aperture supporting multiple polarization unrestrained transverse modes, single transverse and polarization mode operation is achieved by a transverse and polarization mode filter etched into the surface of the VCSEL. While the VCSEL is specifically designed for light source integration on a silicon photonic integrated circuit, its performance in terms of power, spectral purity, polarization, and beam properties are of great interest for a large range of applications.en
dc.description.sponsorshipSwedish Research Council (2016-06077, iTRAN); Swedish Foundation for Strategic Research ( SE13-0014, MuTOI)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid365521en
dc.identifier.citationHaglund, E., Jahed, M., Gustavsson, J. S., Larsson, A., Goyvaerts, J., Baets, R., Roelkens, G., Rensing, M. and O’Brien, P. (2019) 'High-power single transverse and polarization mode VCSEL for silicon photonics integration', Optics Express, 27(13), pp. 18892-18899. (7pp.) DOI: 10.1364/OE.27.018892en
dc.identifier.doi10.1364/OE.27.018892en
dc.identifier.eissn1094-4087
dc.identifier.endpage18899en
dc.identifier.issued13en
dc.identifier.journaltitleOptics Expressen
dc.identifier.startpage18892en
dc.identifier.urihttps://hdl.handle.net/10468/8548
dc.identifier.volume27en
dc.language.isoenen
dc.publisherOSA - The Optical Societyen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/H2020::IA/688519/EU/Silicon Nitride Photonic Integrated Circuit Pilot line for Life Science Applications in the Visible Range/PIX4LIFEen
dc.relation.urihttps://www.osapublishing.org/oe/fulltext.cfm?uri=oe-27-13-18892&id=414678
dc.rights© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreementen
dc.rights.urihttps://www.osapublishing.org/library/license_v1.cfm#VOR-OAen
dc.subjectElectron beam lithographyen
dc.subjectGrating couplersen
dc.subjectOptical fieldsen
dc.subjectPolarization controlen
dc.subjectScanning electron microscopyen
dc.subjectVertical cavity surface emitting lasersen
dc.titleHigh-power single transverse and polarization mode VCSEL for silicon photonics integrationen
dc.typeArticle (peer-reviewed)en
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