Porous to non-porous transition in the morphology of metal assisted etched silicon nanowires

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dc.contributor.authorLotty, Olan
dc.contributor.authorPetkov, Nikolay
dc.contributor.authorGeorgiev, Yordan M.
dc.contributor.authorHolmes, Justin D.
dc.contributor.funderSeventh Framework Programmeen
dc.date.accessioned2018-09-04T14:23:47Z
dc.date.available2018-09-04T14:23:47Z
dc.date.issued2012-11-20
dc.date.updated2018-08-06T14:11:59Z
dc.description.abstractA single step metal assisted etching (MAE) process, utilizing metal ion-containing HF solutions in the absence of an external oxidant, has been developed to generate heterostructured Si nanowires with controllable porous (isotropically etched) and non-porous (anisotropically etched) segments. Detailed characterisation of both the porous and non-porous sections of the Si nanowires was provided by transmission electron microscopy studies, enabling the mechanism of nanowire roughening to be ascertained. The versatility of the MAE method for producing heterostructured Si nanowires with varied and controllable textures is discussed in detail.en
dc.description.statusPeer revieweden
dc.description.versionSubmitted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationOlan, L., Nikolay, P., Yordan, M. G. and Justin, D. H. (2012) 'Porous to Nonporous Transition in the Morphology of Metal Assisted Etched Silicon Nanowires', Japanese Journal of Applied Physics, 51(11S), 11PE03 (5 pp). doi: 10.1143/JJAP.51.11PE03en
dc.identifier.doi10.1143/JJAP.51.11PE03
dc.identifier.endpage11PE03-5en
dc.identifier.issn0021-4922
dc.identifier.issn1347-4065
dc.identifier.journaltitleJapanese Journal of Applied Physicsen
dc.identifier.startpage11PE03-1en
dc.identifier.urihttps://hdl.handle.net/10468/6705
dc.language.isoenen
dc.publisherIOP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::ICT/257856/EU/Semiconducting Nanowire Platform for Autonomous Sensors/SINAPSen
dc.relation.urihttp://iopscience.iop.org/article/10.1143/JJAP.51.11PE03
dc.rights© 2012 The Japan Society of Applied PhysicsThis is an author-created, un-copyedited version of an article accepted for publication in the Japanese Journal of Applied Physics. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1143/JJAP.51.11PE03en
dc.subjectPorous siliconen
dc.subjectMetal ionsen
dc.subjectNanowiresen
dc.subjectSiliconen
dc.subjectTransmission electron microscopyen
dc.subjectHF solutionsen
dc.subjectSi nanowireen
dc.subjectSilicon nanowiresen
dc.subjectSingle-stepen
dc.titlePorous to non-porous transition in the morphology of metal assisted etched silicon nanowiresen
dc.typeArticle (peer-reviewed)en
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