Organo-arsenic molecular layers on silicon for high-density doping
dc.contributor.author | O'Connell, John | |
dc.contributor.author | Verni, Giuseppe A. | |
dc.contributor.author | Gangnaik, Anushka S. | |
dc.contributor.author | Shayesteh, Maryam | |
dc.contributor.author | Long, Brenda | |
dc.contributor.author | Georgiev, Yordan M. | |
dc.contributor.author | Petkov, Nikolay | |
dc.contributor.author | McGlacken, Gerard P. | |
dc.contributor.author | Morris, Michael A. | |
dc.contributor.author | Duffy, Ray | |
dc.contributor.author | Holmes, Justin D. | |
dc.contributor.funder | Science Foundation Ireland | en |
dc.date.accessioned | 2016-01-25T17:22:01Z | |
dc.date.available | 2016-01-25T17:22:01Z | |
dc.date.issued | 2015-06-26 | |
dc.date.updated | 2015-07-24T07:17:44Z | |
dc.description.abstract | This article describes for the first time the controlled monolayer doping (MLD) of bulk and nanostructured crystalline silicon with As at concentrations approaching 2 x 10²⁰ atoms cm⁻³. Characterization of doped structures after the MLD process confirmed that they remained defect- and damage-free, with no indication of increased roughness or a change in morphology. Electrical characterization of the doped substrates and nanowire test structures allowed determination of resistivity, sheet resistance, and active doping levels. Extremely high As-doped Si substrates and nanowire devices could be obtained and controlled using specific capping and annealing steps. Significantly, the As-doped nanowires exhibited resistances several orders of magnitude lower than the predoped materials. | en |
dc.description.sponsorship | Science Foundation Ireland (09/IN.1/I2602) | en |
dc.description.status | Peer reviewed | en |
dc.description.version | Accepted Version | en |
dc.format.mimetype | application/pdf | en |
dc.identifier.citation | O’CONNELL, J., VERNI, G. A., GANGNAIK, A., SHAYESTEH, M., LONG, B., GEORGIEV, Y. M., PETKOV, N., MCGLACKEN, G. P., MORRIS, M. A., DUFFY, R. & HOLMES, J. D. 2015. Organo-arsenic Molecular Layers on Silicon for High-Density Doping. ACS Applied Materials & Interfaces, 7, 15514-15521. http://dx.doi.org/10.1021/acsami.5b03768 | en |
dc.identifier.doi | 10.1021/acsami.5b03768 | |
dc.identifier.endpage | 15521 | en |
dc.identifier.issn | 1944-8244 | |
dc.identifier.issued | 28 | en |
dc.identifier.journaltitle | ACS Applied Materials & Interfaces | en |
dc.identifier.startpage | 15514 | en |
dc.identifier.uri | https://hdl.handle.net/10468/2214 | |
dc.identifier.volume | 7 | en |
dc.language.iso | en | en |
dc.publisher | American Chemical Society | en |
dc.relation.uri | http://pubs.acs.org/doi/abs/10.1021/acsami.5b03768 | |
dc.rights | This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://dx.doi.org/10.1021/acsami.5b03768 | en |
dc.subject | Monolayer | en |
dc.subject | Doping | en |
dc.subject | Shallow | en |
dc.subject | High carrier concentration | en |
dc.subject | Arsenic | en |
dc.subject | MLD | en |
dc.title | Organo-arsenic molecular layers on silicon for high-density doping | en |
dc.type | Article (peer-reviewed) | en |
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