Organo-arsenic molecular layers on silicon for high-density doping

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dc.contributor.authorO'Connell, John
dc.contributor.authorVerni, Giuseppe A.
dc.contributor.authorGangnaik, Anushka S.
dc.contributor.authorShayesteh, Maryam
dc.contributor.authorLong, Brenda
dc.contributor.authorGeorgiev, Yordan M.
dc.contributor.authorPetkov, Nikolay
dc.contributor.authorMcGlacken, Gerard P.
dc.contributor.authorMorris, Michael A.
dc.contributor.authorDuffy, Ray
dc.contributor.authorHolmes, Justin D.
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2016-01-25T17:22:01Z
dc.date.available2016-01-25T17:22:01Z
dc.date.issued2015-06-26
dc.date.updated2015-07-24T07:17:44Z
dc.description.abstractThis article describes for the first time the controlled monolayer doping (MLD) of bulk and nanostructured crystalline silicon with As at concentrations approaching 2 x 10²⁰ atoms cm⁻³. Characterization of doped structures after the MLD process confirmed that they remained defect- and damage-free, with no indication of increased roughness or a change in morphology. Electrical characterization of the doped substrates and nanowire test structures allowed determination of resistivity, sheet resistance, and active doping levels. Extremely high As-doped Si substrates and nanowire devices could be obtained and controlled using specific capping and annealing steps. Significantly, the As-doped nanowires exhibited resistances several orders of magnitude lower than the predoped materials.en
dc.description.sponsorshipScience Foundation Ireland (09/IN.1/I2602)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationO’CONNELL, J., VERNI, G. A., GANGNAIK, A., SHAYESTEH, M., LONG, B., GEORGIEV, Y. M., PETKOV, N., MCGLACKEN, G. P., MORRIS, M. A., DUFFY, R. & HOLMES, J. D. 2015. Organo-arsenic Molecular Layers on Silicon for High-Density Doping. ACS Applied Materials & Interfaces, 7, 15514-15521. http://dx.doi.org/10.1021/acsami.5b03768en
dc.identifier.doi10.1021/acsami.5b03768
dc.identifier.endpage15521en
dc.identifier.issn1944-8244
dc.identifier.issued28en
dc.identifier.journaltitleACS Applied Materials & Interfacesen
dc.identifier.startpage15514en
dc.identifier.urihttps://hdl.handle.net/10468/2214
dc.identifier.volume7en
dc.language.isoenen
dc.publisherAmerican Chemical Societyen
dc.relation.urihttp://pubs.acs.org/doi/abs/10.1021/acsami.5b03768
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://dx.doi.org/10.1021/acsami.5b03768en
dc.subjectMonolayeren
dc.subjectDopingen
dc.subjectShallowen
dc.subjectHigh carrier concentrationen
dc.subjectArsenicen
dc.subjectMLDen
dc.titleOrgano-arsenic molecular layers on silicon for high-density dopingen
dc.typeArticle (peer-reviewed)en
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