Cleaved-facet violet laser diodes with lattice-matched Al0.82In0.18N/GaN multilayers as n-cladding

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dc.contributor.authorCharash, Ragh
dc.contributor.authorKim-Chauveau, H.
dc.contributor.authorLamy, Jean Michel.
dc.contributor.authorAkhter, Mahbub
dc.contributor.authorMaaskant, Pleun P.
dc.contributor.authorFrayssinet, E.
dc.contributor.authorde Mierry, P.
dc.contributor.authorDraeger, A. D.
dc.contributor.authorDuboz, J-Y.
dc.contributor.authorHangleiter, A.
dc.contributor.authorCorbett, Brian M.
dc.contributor.funderEnterprise Ireland
dc.contributor.funderAgence Nationale de la Recherche
dc.contributor.funderEuropean Regional Development Fund
dc.date.accessioned2017-07-28T11:04:40Z
dc.date.available2017-07-28T11:04:40Z
dc.date.issued2011
dc.description.abstractElectrically injected, edge-emitting cleaved-facet violet laser diodes were realized using a 480 nm thick lattice matched Si doped Al0.82In0.18N/GaN multilayer as the cladding on the n-side of the waveguide. Far-field measurements verify strong mode confinement to the waveguide. An extra voltage is measured and investigated using separate mesa structures with a single AlInN insertion. This showed that the electron current has a small thermally activated shunt resistance with a barrier of 0.135 eV and a current which scales according to V-n, where n similar to 3 at current densities appropriate to laser operation. (C) 2011 American Institute of Physics. (doi:10.1063/1.3589974)en
dc.description.sponsorshipEnterprise Ireland (Contract No. IRF/08/SPOT/14); Agence Nationale de la Recherche (French project ANR MATETPRO); European Regional Development Fund (ERA-SPOT program, Truegreen)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid201112
dc.identifier.citationCharash, R., Kim-Chauveau, H., Lamy, J.-M., Akther, M., Maaskant, P. P., Frayssinet, E., Mierry, P. d., Dräger, A. D., Duboz, J.-Y., Hangleiter, A. and Corbett, B. (2011) 'Cleaved-facet violet laser diodes with lattice-matched Al0.82In0.18N/GaN multilayers as n-cladding', Applied Physics Letters, 98(20), pp. 201112. doi: 10.1063/1.3589974en
dc.identifier.doi10.1063/1.3589974
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued20
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4321
dc.identifier.volume98
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.3589974
dc.rights© 2011 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Charash, R., Kim-Chauveau, H., Lamy, J.-M., Akther, M., Maaskant, P. P., Frayssinet, E., Mierry, P. d., Dräger, A. D., Duboz, J.-Y., Hangleiter, A. and Corbett, B. (2011) 'Cleaved-facet violet laser diodes with lattice-matched Al0.82In0.18N/GaN multilayers as n-cladding', Applied Physics Letters, 98(20), pp. 201112 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3589974en
dc.subjectInaln/(in)ganen
dc.subjectElectronicsen
dc.subjectLayersen
dc.subjectAluminiumen
dc.subjectCladdingen
dc.subjectElectrical resistivityen
dc.subjectGolden
dc.subjectLaser diodesen
dc.titleCleaved-facet violet laser diodes with lattice-matched Al0.82In0.18N/GaN multilayers as n-claddingen
dc.typeArticle (peer-reviewed)en
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