Analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature, and oxide charge

Simple item page
dc.contributor.authorNegara, Muhammad A.
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorHurley, Paul K.
dc.contributor.authorYoung, C. D.
dc.contributor.authorMajhi, P.
dc.contributor.authorTsai, W.
dc.contributor.authorBauza, D.
dc.contributor.authorGhibaudo, G.
dc.contributor.funderEuropean Commission
dc.contributor.funderIntel Corporation
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderIntel Ireland Ltd.en
dc.date.accessioned2017-07-12T09:07:43Z
dc.date.available2017-07-12T09:07:43Z
dc.date.issued2009-01-27
dc.description.abstractWe report a new analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors (MOSFETs) by investigating the influence of HfO2 thickness (1.6-3 nm), temperature (50-350 K), and oxide charge (similar to 1x10(11)-8x10(12) cm(-2)) in the high inversion charge region. The fixed oxide charge and interface state densities are deliberately increased using negative-bias-temperature stress, allowing the determination of the Coulomb scattering term as a function of temperature for various oxide charge levels. The temperature dependence of the Coulomb scattering term is consistent with the case of a strongly screened Coulomb potential. Using the experimentally determined temperature dependence of Coulomb scattering term, a model is developed for the electron mobility, including the effects oxide charge (mu(C)), high-k phonon (mu(Ph-Hk)), silicon phonon (mu(Ph-Si)), and surface roughness scattering (mu(SR)). The model provides an accurate description of the experimental data for variations in HfO2 thickness, temperature, and oxide charge. Using the model the relative contributions of each mobility component are presented for varying oxide charge and high-k thickness. Scaling of the HfO2 physical thickness provided a reduction in the oxide charge and high-k phonon scattering mechanisms, leading to an increase in electron mobility in HfO2/TiN gate MOSFETs.en
dc.description.sponsorshipEuropean Commission (under the frame of the Network of Excellence "SINANO"); Science Foundation Ireland (05/IN/1751))en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid24510
dc.identifier.citationNegara, M. A., Cherkaoui, K., Hurley, P. K., Young, C. D., Majhi, P., Tsai, W., Bauza, D. and Ghibaudo, G. (2009) 'Analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature, and oxide charge', Journal of Applied Physics, 105(2), pp. 024510. doi: 10.1063/1.3068367en
dc.identifier.doi10.1063/1.3068367
dc.identifier.endpage8
dc.identifier.issn0021-8979
dc.identifier.issn1089-7550
dc.identifier.issued8
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4217
dc.identifier.volume105
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.3068367
dc.rights© 2009 American Institute of Physics, This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Negara, M. A., Cherkaoui, K., Hurley, P. K., Young, C. D., Majhi, P., Tsai, W., Bauza, D. and Ghibaudo, G. (2009) 'Analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature, and oxide charge', Journal of Applied Physics, 105(2), pp. 024510. doi: 10.1063/1.3068367 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3068367en
dc.subjectElectric potentialen
dc.subjectElectron mobilityen
dc.subjectHafnium compoundsen
dc.subjectInterface statesen
dc.subjectMOSFETen
dc.subjectSurface roughnessen
dc.subjectTitanium compoundsen
dc.titleAnalysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature, and oxide chargeen
dc.typeArticle (peer-reviewed)en
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
3107.pdf
Size:
1.31 MB
Format:
Adobe Portable Document Format
Description:
Published Version
Download
Collections
Tyndall National Institute - Journal Articles