Capacitance and conductance for an MOS system in inversion, with oxide capacitance and minority carrier lifetime extractions

Simple item page
dc.contributor.authorMonaghan, Scott
dc.contributor.authorO'Connor, Éamon
dc.contributor.authorRios, Rafael
dc.contributor.authorFerdousi, Fahmida
dc.contributor.authorFloyd, Liam
dc.contributor.authorRyan, Eimear
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorPovey, Ian M.
dc.contributor.authorKuhn, Kelin J.
dc.contributor.authorHurley, Paul K.
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderIntel Corporationen
dc.contributor.funderSeventh Framework Programmeen
dc.date.accessioned2022-06-28T11:09:55Z
dc.date.available2022-06-28T11:09:55Z
dc.date.issued2014-10
dc.date.updated2022-06-27T08:19:09Z
dc.description.abstractExperimental observations for the In 0.53 Ga 0.47 As metal-oxide-semiconductor (MOS) system in inversion indicate that the measured capacitance (C) and conductance (G or G m ), are uniquely related through two functions of the alternating current angular frequency (ω). The peak value of the first function (G/ω) is equal to the peak value of the second function (-dC/dlog e (ω) ≡ -ωdC/dω). Moreover, these peak values occur at the same angular frequency (ω m ), that is, the transition frequency. The experimental observations are confirmed by physics-based simulations, and applying the equivalent circuit model for the MOS system in inversion, the functional relationship is also demonstrated mathematically and shown to be generally true for any MOS system in inversion. The functional relationship permits the discrimination between high interface state densities and genuine surface inversion. The two function peak values are found to be equal to C ox 2 /(2(C ox + C D )) where C ox is the oxide capacitance per unit area and C D is the semiconductor depletion capacitance in inversion. The equal peak values of the functions, and their observed symmetry relation about ω m on a logarithmic ω plot, opens a new route to experimentally determining C ox . Finally, knowing ω m permits the extraction of the minority carrier generation lifetime in the bulk of the In 0.53 Ga 0.47 As layer.en
dc.description.sponsorshipScience Foundation Ireland (09/IN.1/I2633)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationMonaghan, S., O’Connor, É., Rios, R., Ferdousi, F., Floyd, L., Ryan, E., Cherkaoui, K., Povey, I. M., Kuhn, K. J. and Hurley, P. K. (2014) 'Capacitance and conductance for an MOS system in inversion, with oxide capacitance and minority carrier lifetime extractions', IEEE Transactions on Electron Devices, 61(12), pp. 4176-4185. doi: 10.1109/TED.2014.2362524en
dc.identifier.doi10.1109/TED.2014.2362524en
dc.identifier.eissn1557-9646
dc.identifier.endpage4185en
dc.identifier.issn0018-9383
dc.identifier.issued12en
dc.identifier.journaltitleIEEE Transactions on Electron Devicesen
dc.identifier.startpage4176en
dc.identifier.urihttps://hdl.handle.net/10468/13321
dc.identifier.volume61en
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/09/IN.1/I2633/IE/Investigating Emerging Non-Silicon Transistors (INVENT)/en
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::ICT/619325/EU/Compound Semiconductors for 3D integration/COMPOSE3en
dc.rights© 2014, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.subjectAl₂O₃en
dc.subjectCapacitanceen
dc.subjectConductanceen
dc.subjectIII–Ven
dc.subjectIn₀.₅₃Ga₀.₄₇Asen
dc.subjectInterface state defectsen
dc.subjectInversionen
dc.subjectMetal–oxide–semiconductor (MOS) systemen
dc.subjectMinority carrier generation lifetimeen
dc.subjectOxide capacitanceen
dc.subjectSemiconductor qualityen
dc.titleCapacitance and conductance for an MOS system in inversion, with oxide capacitance and minority carrier lifetime extractionsen
dc.typeArticle (peer-reviewed)en
Files
Original bundle
Now showing 1 - 2 of 2
Thumbnail Image
Name:
SM_IEEE_TED_Vol61_No12_2014_Early-Access.pdf
Size:
1.42 MB
Format:
Adobe Portable Document Format
Description:
Accepted Version
Download
Thumbnail Image
Name:
TED2362524-proof5-1-20pages-28Oct2014.pdf
Size:
3.47 MB
Format:
Adobe Portable Document Format
Description:
Proofs
License bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
2.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download
Collections
Tyndall National Institute - Journal Articles
Mathematical Sciences- Journal Articles