Low-power-consumption optical interconnect on silicon by transfer-printing for used in opto-isolators

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dc.check.date2019-11-30
dc.check.infoAccess to this article is restricted until 12 months after publication by request of the publisher.en
dc.contributor.authorLiu, Lei
dc.contributor.authorLoi, Ruggero
dc.contributor.authorRoycroft, Brendan
dc.contributor.authorO'Callaghan, James
dc.contributor.authorTrindade, António José
dc.contributor.authorKelleher, Steven
dc.contributor.authorGocalińska, Agnieszka M.
dc.contributor.authorThomas, Kevin K.
dc.contributor.authorPelucchi, Emanuele
dc.contributor.authorBower, Christopher A.
dc.contributor.authorCorbett, Brian M.
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2018-12-13T13:07:24Z
dc.date.available2018-12-13T13:07:24Z
dc.date.issued2019-11-30
dc.date.updated2018-12-13T12:59:08Z
dc.description.abstractOn-chip optical interconnects heterogeneously integrated on silicon wafers by transfer-print technology are presented for the first time. Thin (<5 µm), micron sized light-emitting diodes (LEDs) and photo diodes (PDs) are prefabricated and transfer-printed to silicon wafer with polymer waveguides built between them. Data transmission with total power consumption as low as 1 mW, signal to noise ratio of  >250 and current transfer ratio of 0.1% in a compact volume of  <0.0004 mm3 are demonstrated. Experiment shows that the polymer waveguide between the LED and PD plays a key role in enhancing the data transmission efficiency. Reciprocal performance for bidirectional transmission is also achieved. The results show the potential for cost-effective and low profile form-factor on-chip opto-isolators.en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationLei, L., Ruggero, L., Brendan, R., James, O. C., Antonio Jose, T., Steven, K., Agnieszka, G., Kevin, T., Emanuele, P., Christopher, A. B. and Brian, C. (2019) 'Low-power-consumption optical interconnect on silicon by transfer-printing for used in opto-isolators', Journal of Physics D: Applied Physics, 52(6), 064001 (9 pp). doi: 10.1088/1361-6463/aaf064en
dc.identifier.doi10.1088/1361-6463/aaf064
dc.identifier.endpage64001-9en
dc.identifier.issn0022-3727
dc.identifier.issued6en
dc.identifier.journaltitleJournal of Physics D: Applied Physicsen
dc.identifier.startpage64001-1en
dc.identifier.urihttps://hdl.handle.net/10468/7218
dc.identifier.volume52en
dc.language.isoenen
dc.publisherIOP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Research Centres/12/RC/2276/IE/I-PIC Irish Photonic Integration Research Centre/en
dc.relation.urihttp://stacks.iop.org/0022-3727/52/i=6/a=064001
dc.rights© 2018 IOP Publishing Ltd. This is an author-created, un-copyedited version of an article accepted for publication in Journal of Physics D: Applied Physics. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1361-6463/aaf064 . As the Version of Record of this article has been published on a subscription basis, this Accepted Manuscript will be available for reuse under a CC BY-NC-ND 3.0 licence after a 12 month embargo period.en
dc.rights.urihttps://creativecommons.org/licences/by-nc-nd/3.0en
dc.subjectOptical interconnectsen
dc.subjectPhotonic integrated circuitsen
dc.subjectHeterogeneous integrationen
dc.titleLow-power-consumption optical interconnect on silicon by transfer-printing for used in opto-isolatorsen
dc.typeArticle (peer-reviewed)en
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