Alkane and alkanethiol passivation of halogenated Ge nanowires

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dc.contributor.authorCollins, Gillian
dc.contributor.authorFleming, Peter G.
dc.contributor.authorBarth, Sven
dc.contributor.authorO'Dwyer, Colm
dc.contributor.authorBoland, John J.
dc.contributor.authorMorris, Michael A.
dc.contributor.authorHolmes, Justin D.
dc.contributor.funderIrish Research Council for Science, Engineering and Technologyen
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderHigher Education Authorityen
dc.date.accessioned2018-08-28T15:47:31Z
dc.date.available2018-08-28T15:47:31Z
dc.date.issued2010-11-16
dc.date.updated2018-08-06T15:33:04Z
dc.description.abstractThe ambient stability and surface coverage of halogen (Cl, Br, and I) passivated germanium nanowires were investigated by X-ray photoelectron and X-ray photoelectron emission spectroscopy. After exposure to air for 24 h, the stability of the halogen-terminated Ge nanowire surfaces toward reoxidation was found to improve with the increasing size of the halogen atoms, i.e., I > Br > Cl. Halogen termination was effective in removing the native Ge oxide (GeOx) and could also be utilized for further functionalization. Functionalization of the halogenated Ge nanowires was investigated using alkyl Grignard reagents and alkanethiols. The stability of the alkyl and alkanethiol passivation layers from the different halogen-terminated surfaces was investigated by X-ray photoelectron spectroscopy and attenuated total reflectance infrared spectroscopy. Alkanethiol functionalized nanowires showed greater resistance against reoxidation of the Ge surface compared to alkyl functionalization when exposed to ambient conditions for 1 week.en
dc.description.sponsorshipHigher Education Authority (HEA Program for Research in Third Level Institutions (2007-2011) via the INSPIRE programme)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationCollins, G., Fleming, P., Barth, S., O'Dwyer, C., Boland, J. J., Morris, M. A. and Holmes, J. D. (2010) 'Alkane and Alkanethiol Passivation of Halogenated Ge Nanowires', Chemistry of Materials, 22(23), pp. 6370-6377. doi: 10.1021/cm1023986en
dc.identifier.doi10.1021/cm1023986
dc.identifier.endpage6377en
dc.identifier.issn0897-4756
dc.identifier.journaltitleChemistry of Materialsen
dc.identifier.startpage6370en
dc.identifier.urihttps://hdl.handle.net/10468/6652
dc.identifier.volume22en
dc.language.isoenen
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Centre for Science Engineering and Technology (CSET)/08/CE/I1432/IE/CSET CRANN: 2nd Term funding/en
dc.relation.urihttp://pubs.acs.org/doi/10.1021/cm1023986
dc.rights© 2010 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Chemistry of Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/10.1021/cm1023986en
dc.subjectIodineen
dc.subjectAlkylationen
dc.subjectBromineen
dc.subjectChlorineen
dc.subjectElectronsen
dc.subjectEmission spectroscopyen
dc.subjectGermaniumen
dc.subjectHalogenationen
dc.subjectInfrared spectroscopyen
dc.subjectNanowiresen
dc.subjectParaffinsen
dc.subjectPassivationen
dc.subjectPhotonsen
dc.subjectX ray photoelectron spectroscopyen
dc.subjectX raysen
dc.titleAlkane and alkanethiol passivation of halogenated Ge nanowiresen
dc.typeArticle (peer-reviewed)en
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