Real-time dark count compensation and temperature monitoring using dual SPADs on the same chip

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dc.contributor.authorMorrison, Alan P.
dc.contributor.authorDeng, Shijie
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2018-06-28T13:24:54Z
dc.date.available2018-06-28T13:24:54Z
dc.date.issued2018-04-12
dc.date.updated2018-06-28T13:18:50Z
dc.description.abstractDual single-photon avalanche photodiodes (SPADs) integrated on the same chip enable the effective compensation of dark count rate (DCR) in the SPAD and also the real-time monitoring of the chip temperature. In the design, two identical SPA Ds are fabricated on the same chip. one operating normally and the other one covered by a metal layer to be kept in the dark. The two SPADs are identically biased and connected to identical active quench and reset integrated circuits. As both detectors are identical in structure. the dark count is expected to be similar for both. Experimental measurements show that the two SPADs exhibit similar DCR performance over a range of bias voltages and temperatures. By measuring the DCR from the covered SPAD, the DCR from the normally operated SPAD can be accounted for directly. This can he particularly useful for SPADs, where the DCR is high. Experiments under illumination show that the shaded SPAD is immune to illumination over a wide range of incident light power. This enables the real-time monitoring of the temperature on the sensor chip using the counting rate from the dark operated avalanche photodiode (APD).en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationDeng, S. and Morrison, A. P. (2018) 'Real-time dark count compensation and temperature monitoring using dual SPADs on the same chip', Electronics Letters, 54(10), pp. 642-643, http://digital-library.theiet.org/content/journals/10.1049/el.2018.0341.en
dc.identifier.doi10.1049/el.2018.0341
dc.identifier.endpage643en
dc.identifier.issn0013-5194
dc.identifier.issued10en
dc.identifier.journaltitleElectronics Lettersen
dc.identifier.startpage642en
dc.identifier.urihttps://hdl.handle.net/10468/6386
dc.identifier.volume54en
dc.language.isoenen
dc.publisherInstitution of Engineering and Technology, IETen
dc.relation.urihttp://digital-library.theiet.org/content/journals/10.1049/el.2018.0341
dc.rights© The Institution of Engineering and Technology 2018. This paper is a postprint of a paper submitted to and accepted for publication in Electronics Letters and is subject to Institution of Engineering and Technology Copyright. The copy of record is available at IET Digital Library.en
dc.subjectAvalanche photodiodesen
dc.subjectIntegrated optoelectronicsen
dc.subjectIntegrated opticsen
dc.subjectPhotodetectorsen
dc.subjectPhoton countingen
dc.subjectTemperature sensorsen
dc.subjectDual single-photon avalanche photodiodesen
dc.subjectIncident light poweren
dc.subjectNormally operated SPADen
dc.subjectTemperature monitoringen
dc.subjectCounting rateen
dc.subjectReal-time monitoringen
dc.subjectBias voltagesen
dc.subjectReal-time dark count compensationen
dc.subjectSimilar DCR performanceen
dc.subjectChip temperatureen
dc.subjectIdentical active quenchen
dc.subjectDark count rate compensationen
dc.subjectIntegrated circuitsen
dc.subjectDual SPADsen
dc.subjectShaded SPADen
dc.subjectSensor chipen
dc.titleReal-time dark count compensation and temperature monitoring using dual SPADs on the same chipen
dc.typeArticle (peer-reviewed)en
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