Failure analysis of MIM and MIS structures using point-to-event distance and angular probability distributions

dc.contributor.authorMas, Xavier Saura
dc.contributor.authorMonaghan, Scott
dc.contributor.authorHurley, Paul K.
dc.contributor.authorSuñé, Jordi
dc.contributor.authorMiranda, Enrique
dc.contributor.funderMinisterio de Ciencia y Tecnologíaen
dc.contributor.funderEuropean Regional Development Funden
dc.contributor.funderGeneralitat de Catalunyaen
dc.date.accessioned2022-07-21T13:19:47Z
dc.date.available2022-07-21T13:19:47Z
dc.date.issued2014-11-11
dc.date.updated2022-07-19T21:07:27Z
dc.description.abstractMultiple breakdown (BD) spots are generated in large (>10 -4 cm 2 ) circular and square area metal-insulator-metal and metal-insulator-semiconductor devices using ramped and constant-voltage electrical stresses. Due to the important local thermal effects that take place at the very moment of the formation of the conductive paths spanning the insulating layer, the failure events become visible on the top metal electrode of the structures as a point pattern. The resulting point-to-event distance and angular histograms are compared with the theoretical distributions corresponding to a complete spatial randomness (CSR) process. The location of the voltage probe tip over the top electrode is considered here as the singular point from which the positions of the BD spots are referred to. In this way, we are able to assess the influence of the probe point on the final BD spot distribution. In most of the cases, this distribution is consistent with CSR, but after prolonged electrical stress, a deviation is detected. This departure from CSR is ascribed to the concentration of the current lines in the top electrode toward the center of the structure. The methods reported here are general and can be used for analyzing the generation of similar point patterns occurring in other structures or material systems.en
dc.description.sponsorshipMinisterio de Ciencia y Tecnología (TEC2012-32305); Generalitat de Catalunya (Contract 2014SGR384)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationMas, X. S., Monaghan, S., Hurley, P. K, Suñé, J. and Miranda, E. (2014) 'Failure analysis of MIM and MIS structures using point-to-event distance and angular probability distributions', IEEE Transactions on Device and Materials Reliability, 14(4), pp. 1080-1090. doi: 10.1109/TDMR.2014.2369377en
dc.identifier.doi10.1109/TDMR.2014.2369377en
dc.identifier.eissn1558-2574
dc.identifier.endpage1090en
dc.identifier.issn1530-4388
dc.identifier.issued4en
dc.identifier.journaltitleIEEE Transactions on Device and Materials Reliabilityen
dc.identifier.startpage1080en
dc.identifier.urihttps://hdl.handle.net/10468/13389
dc.identifier.volume14en
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.rights© 2014, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.subjectMISen
dc.subjectMIMen
dc.subjectOxide breakdownen
dc.subjectOxide reliabilityen
dc.subjectSpatial statisticsen
dc.subject~Tyndall National Institute - Journal Articles~en
dc.titleFailure analysis of MIM and MIS structures using point-to-event distance and angular probability distributionsen
dc.typeArticle (peer-reviewed)en
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