InxAl1-xN/Al0.53Ga0.47N multiple quantum wells on Al0.5Ga0.5N buffer with variable in-plane lattice parameter

Simple item page
dc.check.date2019-09-23
dc.check.infoAccess to this article is restricted until 24 months after publication by request of the publisheren
dc.contributor.authorZubialevich, Vitaly Z.
dc.contributor.authorRzheutski, Mikalai V.
dc.contributor.authorLi, Haoning
dc.contributor.authorSadler, Thomas C.
dc.contributor.authorAlam, Shahab N.
dc.contributor.authorBhardwaj, Vipul
dc.contributor.authorLutsenko, Evgenii V.
dc.contributor.authorYablonskii, Gennadii P.
dc.contributor.authorParbrook, Peter J.
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderHigher Education Authorityen
dc.contributor.funderMinistry of Science Research and Technology, Iranen
dc.date.accessioned2018-05-02T11:17:45Z
dc.date.available2018-05-02T11:17:45Z
dc.date.issued2017-09-23
dc.date.updated2018-05-02T10:41:06Z
dc.description.abstractThe structural and luminescent properties of InxAl1-xN/Al0.53Ga0.47N multiple quantum wells (MQW) grown on an Al0.5Ga0.5N buffer partially relaxed with respect to an underlying AlN-template are reported. A significant redshift and improvement of ultraviolet (UV) photoluminescence (PL) intensity is found for InAlN MQWs grown on AlGaN buffers with higher relaxation degree. This is attributed to a higher QW indium incorporation as confirmed also by X-ray diffraction (XRD). The nature of room temperature time resolved PL is studied and discussed from the point of view of the possibility of a type I-type II band lineup transition in the InAlN-AlGaN system.en
dc.description.sponsorshipHigher Education Authority (Programme for Research in Third Level Institutions Cycles 4 and 5 via the INSPIRE and TYFFANI projects)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationZubialevich, V. Z., Rzheutski, M. V., Li, H., Sadler, T. C., Alam, S. N., Bhardwaj, V., Lutsenko, E. V., Yablonskii, G. P. and Parbrook, P. J. (2018) 'InxAl1–xN/Al0.53Ga0.47N multiple quantum wells on Al0.5Ga0.5N buffer with variable in-plane lattice parameter', Journal of Luminescence, 194, pp. 797-802. doi:10.1016/j.jlumin.2017.09.053en
dc.identifier.doi10.1016/j.jlumin.2017.09.053
dc.identifier.endpage802en
dc.identifier.issn0022-2313
dc.identifier.journaltitleJournal of Luminescenceen
dc.identifier.startpage797en
dc.identifier.urihttps://hdl.handle.net/10468/5975
dc.identifier.volume194en
dc.language.isoenen
dc.publisherElsevier B.V.en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/10/IN.1/I2993/IE/Advanced Ultraviolet Emitters from InAlN Based Alloy Structures/en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Stokes Professorship & Lectureship Programme/07/EN/E001A/IE/Peter Parbrook/en
dc.rights© 2017, Elsevier B.V. All rights reserved. This manuscript version is made available under the CC-BY-NC-ND 4.0 license.en
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.subjectChemical-vapor-depositionen
dc.subjectInganen
dc.subjectLuminescenceen
dc.subjectSapphireen
dc.subjectLayersen
dc.titleInxAl1-xN/Al0.53Ga0.47N multiple quantum wells on Al0.5Ga0.5N buffer with variable in-plane lattice parameteren
dc.typeArticle (peer-reviewed)en
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
3850.pdf
Size:
975.91 KB
Format:
Adobe Portable Document Format
Description:
Accepted Version
Download
License bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
2.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download
Collections
Tyndall National Institute - Journal Articles