Doping controlled roughness and defined mesoporosity in chemically etched silicon nanowires with tunable conductivity

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dc.contributor.authorMcSweeney, William
dc.contributor.authorLotty, Olan
dc.contributor.authorMogili, N. V. V.
dc.contributor.authorGlynn, Colm
dc.contributor.authorGeaney, Hugh
dc.contributor.authorTanner, David A.
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorO'Dwyer, Colm
dc.contributor.funderIrish Research Council for Science, Engineering and Technologyen
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderHigher Education Authorityen
dc.contributor.funderEuropean Commissionen
dc.contributor.funderUniversity College Corken
dc.contributor.funderSeventh Framework Programme
dc.date.accessioned2016-02-29T09:22:26Z
dc.date.available2016-02-29T09:22:26Z
dc.date.issued2013-07-18
dc.description.abstractBy using Si(100) with different dopant type (n++-type (As) or p-type (B)), we show how metal-assisted chemically etched (MACE) nanowires (NWs) can form with rough outer surfaces around a solid NW core for p-type NWs, and a unique, defined mesoporous structure for highly doped n-type NWs. We used high resolution electron microscopy techniques to define the characteristic roughening and mesoporous structure within the NWs and how such structures can form due to a judicious choice of carrier concentration and dopant type. The n-type NWs have a mesoporosity that is defined by equidistant pores in all directions, and the inter-pore distance is correlated to the effective depletion region width at the reduction potential of the catalyst at the silicon surface in a HF electrolyte. Clumping in n-type MACE Si NWs is also shown to be characteristic of mesoporous NWs when etched as high density NW layers, due to low rigidity (high porosity). Electrical transport investigations show that the etched nanowires exhibit tunable conductance changes, where the largest resistance increase is found for highly mesoporous n-type Si NWs, in spite of their very high electronic carrier concentration. This understanding can be adapted to any low-dimensional semiconducting system capable of selective etching through electroless, and possibly electrochemical, means. The process points to a method of multiscale nanostructuring NWs, from surface roughening of NWs with controllable lengths to defined mesoporosity formation, and may be applicable to applications where high surface area, electrical connectivity, tunable surface structure, and internal porosity are required.en
dc.description.sponsorshipIrish Government (INSPIRE programme, funded by the Irish Government's Programme for Research in Third Level Institutions, Cycle 4, National Development Plan 2007-2013); European Commission (European Union 7th Framework Programme under the SiNAPS project (Project Ref. No. 257856)); Irish Research Council (Award No. RS/2011/797);.Science Foundation Ireland (Award No. 07/SK/B1232a); University College Cork (UCC Strategic Research Fund)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationMcSweeney, W., Lotty, O., Mogili, N. V. V., Glynn, C., Geaney, H., Tanner, D., Holmes, J. D. and O'Dwyer, C. (2013) 'Doping controlled roughness and defined mesoporosity in chemically etched silicon nanowires with tunable conductivity', Journal of Applied Physics, 114(3), 034300 (11 pp). doi: 10.1063/1.4813867en
dc.identifier.doi10.1063/1.4813867
dc.identifier.endpage034309 (11)en
dc.identifier.issn0021-8979
dc.identifier.issued3en
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage034309 (1)en
dc.identifier.urihttps://hdl.handle.net/10468/2408
dc.identifier.volume114en
dc.language.isoenen
dc.publisherAmerican Institute of Physics (AIP)en
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::ICT/257856/EU/Semiconducting Nanowire Platform for Autonomous Sensors/SINAPS
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Stokes Professorship & Lectureship Programme/07/SK/B1232a/IE/Colm ODwyer/
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Short Term Travel Fellowship (STTF)/07/SK/B1232a - STTF 11/IE/Optical Probing of Phase Changes in Inverse opal Photonic Crystal Li-on Battery Electrodes/
dc.relation.urihttp://scitation.aip.org/content/aip/journal/jap/114/3/10.1063/1.4813867
dc.rights© 2013 AIP Publishing LLCen
dc.rights.urihttp://scitation.aip.org/termsconditionsen
dc.subjectElectrical connectivityen
dc.subjectElectrical transporten
dc.subjectMesoporous structuresen
dc.subjectReduction potentialen
dc.subjectResistance increaseen
dc.subjectSemiconducting systemsen
dc.subjectSurface-rougheningen
dc.subjectTunable conductivityen
dc.subjectCarrier concentrationen
dc.subjectHigh resolution electron microscopyen
dc.subjectMesoporous materialsen
dc.subjectNanowiresen
dc.subjectPorosityen
dc.subjectSiliconen
dc.titleDoping controlled roughness and defined mesoporosity in chemically etched silicon nanowires with tunable conductivityen
dc.typeArticle (peer-reviewed)en
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