Influence of surface passivation on indium arsenide nanowire band gap energies

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dc.contributor.authorRazavi, Pedramen
dc.contributor.authorGreer, James C.en
dc.contributor.funderSeventh Framework Programmeen
dc.contributor.funderUniversity of Nottingham Ningbo Chinaen
dc.date.accessioned2023-10-20T14:44:51Z
dc.date.available2023-10-20T14:44:51Z
dc.date.issued2019-07-31en
dc.description.abstractThe interplay between surface chemistry and quantum confinement on the band gap energies of indium arsenide (InAs) nanowires is investigated by first principle computations as the surface-to-volume ratio increases with decreasing cross section. Electronic band structures are presented as determined by both density functional and hybrid density functional theory (DFT) calculations; the latter are used to provide improved band gap energy estimates over those from standard approximate DFT methods. Different monovalent chemical species with varying electron affinity are used to eliminate surface states to enable direct comparison between surface chemistry and quantum confinement. The influence of these effects on energy band gaps and electron effective masses is highlighted. It is found that many desirable properties in terms of electronic properties and the elimination of surface states for nanoscale field effect transistors fabricated using [100]-oriented InAs can be achieved.en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationRazavi, P. and Greer, J. C. (2019) 'Influence of surface passivation on indium arsenide nanowire band gap energies', Journal of Electronic Materials, 48, pp. 6654-6660. doi: 10.1007/s11664-019-07476-0en
dc.identifier.doi10.1007/s11664-019-07476-0en
dc.identifier.eissn1543-186Xen
dc.identifier.endpage6660en
dc.identifier.issn0361-5235en
dc.identifier.journaltitleJournal of Electronic Materialsen
dc.identifier.startpage6654en
dc.identifier.urihttps://hdl.handle.net/10468/15141
dc.identifier.volume48en
dc.language.isoenen
dc.publisherSpringer Nature Ltd.en
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::NMP/604416/EU/From atom-to-Device Explicit simulation Environment for Photonics and Electronics Nanostructures/DEEPENen
dc.rights© 2019, The Minerals, Metals & Materials Society. Published by Springer Nature Limited. This is a post-peer-review, pre-copyedit version of an article published in Journal of Electronic Materials. The final authenticated version is available online at: https://doi.org/10.1007/s11664-019-07476-0. The manuscript version is made available under the terms of the Creative Commons Attribution 4.0 International License: http://creativecommons.org/licenses/by/4.0en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0en
dc.subjectInAsen
dc.subjectGaAsen
dc.subjectNanowiresen
dc.subjectElectronic parametersen
dc.subjectDensity functionalen
dc.subjectSurface passivationen
dc.subjectQuantum confinementen
dc.titleInfluence of surface passivation on indium arsenide nanowire band gap energiesen
dc.typeArticle (peer-reviewed)en
oaire.citation.issue10en
oaire.citation.volume48en
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