Energy state distributions of the P(b) centers at the (100), (110), and (111) Si/SiO(2) interfaces investigated by Laplace deep level transient spectroscopy

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dc.contributor.authorDobaczewski, L.
dc.contributor.authorBernardini, S.
dc.contributor.authorKruszewski, P.
dc.contributor.authorHurley, Paul K.
dc.contributor.authorMarkevich, V. P.
dc.contributor.authorHawkins, I. D.
dc.contributor.authorPeaker, A. R.
dc.contributor.funderEngineering and Physical Sciences Research Council
dc.contributor.funderScience Foundation Ireland
dc.date.accessioned2017-07-28T11:47:33Z
dc.date.available2017-07-28T11:47:33Z
dc.date.issued2008
dc.description.abstractThe energy distribution of the P(b) centers at the Si/SiO(2) interface has been determined using isothermal laplace deep level transient spectroscopy. For the (111) and (110) interface orientations, the distributions are similar and centered at 0.38 eV below the silicon conduction band. This is consistent with only P(b0) states being present. For the (100) orientation, two types of the interface states are observed: one similar to the (111) and (110) orientations while the other has a negative-U character in which the emission rate versus surface potential dependence is qualitatively different from that observed for P(b0) and is presumed to be P(b1). (C) 2008 American Institute of Physics. (DOI: 10.1063/1.2939001)en
dc.description.sponsorshipScience Foundation Ireland (05/IN/1751)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid242104
dc.identifier.citationDobaczewski, L., Bernardini, S., Kruszewski, P., Hurley, P. K., Markevich, V. P., Hawkins, I. D. and Peaker, A. R. (2008) 'Energy state distributions of the Pb centers at the (100), (110), and (111) Si∕SiO2 interfaces investigated by Laplace deep level transient spectroscopy', Applied Physics Letters, 92(24), pp. 242104. doi: 10.1063/1.2939001en
dc.identifier.doi10.1063/1.2939001
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued24
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4369
dc.identifier.volume92
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.2939001
dc.rights© 2008 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Dobaczewski, L., Bernardini, S., Kruszewski, P., Hurley, P. K., Markevich, V. P., Hawkins, I. D. and Peaker, A. R. (2008) 'Energy state distributions of the Pb centers at the (100), (110), and (111) Si∕SiO2 interfaces investigated by Laplace deep level transient spectroscopy', Applied Physics Letters, 92(24), pp. 242104 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2939001en
dc.subjectElectron-spin-resonanceen
dc.subjectPb1 hyperfine spectrumen
dc.subjectSi band-gapen
dc.subjectDependent recombinationen
dc.subjectSilicon-wafersen
dc.subjectSemiconductorsen
dc.subjectDefectsen
dc.subjectDensitiesen
dc.subjectChargeen
dc.subjectTrapsen
dc.subjectDeep level transient spectroscopyen
dc.subjectFermi levelsen
dc.subjectSiliconen
dc.subjectCapacitanceen
dc.subjectElectric measurementsen
dc.titleEnergy state distributions of the P(b) centers at the (100), (110), and (111) Si/SiO(2) interfaces investigated by Laplace deep level transient spectroscopyen
dc.typeArticle (peer-reviewed)en
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