Nanoscale fissure formation in AlxGa1–xN/GaN heterostructures and their influence on Ohmic contact formation

dc.contributor.authorSmith, Matthew D.
dc.contributor.authorThomson, D.
dc.contributor.authorZubialevich, Vitaly Z.
dc.contributor.authorLi, Haoning
dc.contributor.authorNaresh-Kumar, G.
dc.contributor.authorTrager-Cowan, C.
dc.contributor.authorParbrook, Peter J.
dc.contributor.funderEngineering and Physical Sciences Research Council
dc.contributor.funderIrish Research Council
dc.contributor.funderEuropean Space Agency
dc.contributor.funderEuropean Regional Development Fund
dc.date.accessioned2018-07-30T10:30:26Z
dc.date.available2018-07-30T10:30:26Z
dc.date.issued2017
dc.description.abstractNanoscale surface fissures on AlxGa1-xN/GaN (15nm/1 mu m) heterostructures grown by metalorganic vapour phase epitaxy (MOVPE) were imaged using tapping-mode atomic force microscopy (AFM) and electron channelling contrast imaging (ECCI). Fissure formation was linked to threading dislocations, and was only observed in samples cooled under H-2 and NH3, developing with increasing barrier layer Al content. No strain relaxation was detected regardless of fissure formation up to barrier layer Al composition fractions of x=0.37. A reduction of measured channel carrier density was found in fissured samples at low temperature. This instability is attributed to shallow trap formation associated with fissure boundaries. For Ti/Al/Ni/Au Ohmic contact formation to high Al content barrier layers, fissures were found to offer conduction routes to the 2DEG that allow for low resistance contacts, with fissure-free samples requiring additional optimisation of the metal stack and anneal conditions to achieve contact resistivity of order those measured in fissured samples. In addition, the effects of fissures were found to be detrimental to thermal stability of sheet and contact resistance, suggesting that fissure formation compromises the integrity of the 2DEG.en
dc.description.sponsorshipEngineering and Physical Sciences Research Council (EP/J015792/1); European Regional Development Fund ("INSPIRE")en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid1600353
dc.identifier.citationSmith, M.D., Thomson, D., Zubialevich, V.Z., Li, H., Naresh-Kumar, G., Trager-Cowan, C. and Parbrook, P.J. (2017) 'Nanoscale fissure formation in AlxGa1–xN/GaN heterostructures and their influence on Ohmic contact formation', Physica Status Solidi A - Applications and Materials Science, 214(1), 1600353 (6pp). doi: 10.1002/pssa.201600353en
dc.identifier.doi10.1002/pssa.201600353
dc.identifier.endpage6
dc.identifier.issn1862-6300
dc.identifier.issued1
dc.identifier.journaltitlePhysica Status Solidi A - Applications and Materials Scienceen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/6511
dc.identifier.volume214
dc.language.isoenen
dc.publisherJohn Wiley & Sons Inc.en
dc.relation.urihttps://onlinelibrary.wiley.com/doi/abs/10.1002/pssa.201600353
dc.rights© 2016, WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is the peer reviewed version of the following article: Smith, M.D., Thomson, D., Zubialevich, V.Z., Li, H., Naresh-Kumar, G., Trager-Cowan, C. and Parbrook, P.J. (2017) 'Nanoscale fissure formation in AlxGa1–xN/GaN heterostructures and their influence on Ohmic contact formation', Physica Status Solidi A - Applications and Materials Science, 214(1), 1600353 (6pp). doi: 10.1002/pssa.201600353, which has been published in final form at https://doi.org/10.1002/pssa.201600353 This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions.en
dc.subjectAlganen
dc.subjectAnnealingen
dc.subjectContact resistanceen
dc.subjectFissuresen
dc.subjectHigh electron mobility transistorsen
dc.subjectOhmic contactsen
dc.titleNanoscale fissure formation in AlxGa1–xN/GaN heterostructures and their influence on Ohmic contact formationen
dc.typeArticle (peer-reviewed)en
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