Electrical properties of platinum interconnects deposited by electron beam induced deposition of the carbon-free precursor, Pt(PF3)4

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dc.contributor.authorO'Regan, Colm
dc.contributor.authorLee, Angelica
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorPetkov, Nikolay
dc.contributor.authorTrompenaars, Piet
dc.contributor.authorMulders, Hans
dc.contributor.funderHigher Education Authorityen
dc.contributor.funderIrish Research Councilen
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2016-06-27T15:44:03Z
dc.date.available2016-06-27T15:44:03Z
dc.date.issued2013-03
dc.date.updated2013-03-07T20:37:47Z
dc.description.abstractComprehensive analysis of the electrical properties, structure and composition of Pt interconnects, developed via mask-less, electron beam induced deposition of the carbon-free Pt precursor, Pt(PF3)4, is presented. The results demonstrate significantly improved electrical performance in comparison with that generated from the standard organometallic precursor, (CH3)3Pt(CpCH3). In particular, the Pt interconnects exhibited perfect ohmic behavior and resistivity that can be diminished to 0.24 × 10−3 Ω cm, which is only one order of magnitude higher than bulk Pt, in comparison to 0.2 Ω cm for the standard carbon-containing interconnects. A maximum current density of 1.87 × 107 A cm−2 was achieved for the carbon-free Pt, compared to 9.44 × 105 A cm−2 for the standard Pt precursor. The enhanced electrical properties of the as-deposited materials can be explained by the absence of large amounts of carbon impurities, and their further improvement by postdeposition annealing in N2. In-situ TEM heating experiments confirmed that the annealing step induces sintering of the Pt nanocrystals and improved crystallinity, which contributes to the enhanced electrical performance. Alternative annealing under reducing conditions resulted in improved performance of the standard Pt interconnects, while the carbon-free deposit suffered electrical and structural breakage due to formation of larger Pt islandsen
dc.description.sponsorshipHigher Education Authority (Program for Research in Third Level Institutions (2007-2011) via the INSPIRE programme); Science Foundation Ireland (09/SIRG/I1621 and 09/IN.1/I2602); Irish Research Council (09/SIRG/I1621 and 09/IN.1/I2602)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationO'REGAN, C., LEE, A., HOLMES, J. D., PETKOV, N., TROMPENAARS, P. & MULDERS, H. 2013. Electrical properties of platinum interconnects deposited by electron beam induced deposition of the carbon-free precursor, Pt(PF3)4. Journal of Vacuum Science & Technology B, 31, 021807. doi: 10.1116/1.4794343en
dc.identifier.doi10.1116/1.4794343
dc.identifier.endpage021807-8en
dc.identifier.issn2166-2746
dc.identifier.issn2166-2754
dc.identifier.issued2en
dc.identifier.journaltitleJournal of Vacuum Science and Technology Ben
dc.identifier.startpage021807-1en
dc.identifier.urihttps://hdl.handle.net/10468/2795
dc.identifier.volume31en
dc.language.isoenen
dc.publisherAmerican Institute of Physics Publishingen
dc.relation.urihttp://scitation.aip.org/content/avs/journal/jvstb/31/2/10.1116/1.4794343
dc.rights© 2013 American Vacuum Society. All rights reserved.en
dc.subjectCurrent densityen
dc.subjectNanostructured materialsen
dc.subjectInterconnectionsen
dc.subjectSinteringen
dc.subjectImpuritiesen
dc.subjectPlatinumen
dc.subjectEBICen
dc.subjectAnnealingen
dc.titleElectrical properties of platinum interconnects deposited by electron beam induced deposition of the carbon-free precursor, Pt(PF3)4en
dc.typeArticle (peer-reviewed)en
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