Resist-substrate interface tailoring for generating high density arrays of Ge and Bi2Se3 nanowires by electron beam lithography

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dc.contributor.authorHobbs, Richard G.
dc.contributor.authorSchmidt, Michael
dc.contributor.authorBolger, Ciara T.
dc.contributor.authorGeorgiev, Yordan M.
dc.contributor.authorFleming, Peter G.
dc.contributor.authorMorris, Michael A.
dc.contributor.authorPetkov, Nikolay
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorXiu, Faxian
dc.contributor.authorWang, Kang L.
dc.contributor.authorDjara, Vladimir
dc.contributor.authorYu, Ran
dc.contributor.authorColinge, Jean-Pierre
dc.contributor.funderHigher Education Authorityen
dc.contributor.funderIrish Research Council for Science Engineering and Technologyen
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2016-06-28T14:25:13Z
dc.date.available2016-06-28T14:25:13Z
dc.date.issued2012-06-06
dc.date.updated2013-03-07T20:42:56Z
dc.description.abstractThe authors report a chemical process to remove the native oxide on Ge and Bi2Se3 crystals, thus facilitating high-resolution electron beam lithography (EBL) on their surfaces using a hydrogen silsesquioxane (HSQ) resist. HSQ offers the highest resolution of all the commercially available EBL resists. However, aqueous HSQ developers such as NaOH and tetramethylammonium hydroxide have thus far prevented the fabrication of high-resolution structures via the direct application of HSQ to Ge and Bi2Se3, due to the solubility of components of their respective native oxides in these strong aqueous bases. Here we provide a route to the generation of ordered, high-resolution, high-density Ge and Bi2Se3 nanostructures with potential applications in microelectronics, thermoelectric, and photonics devices.                         en
dc.description.sponsorshipIrish Research Council for Science, Engineering and Technology (08/CE/I1432, 09/IN.1/I2602, and 09/SIRG/I1621); Science Foundation Ireland (08/CE/I1432, 09/IN.1/I2602, and 09/SIRG/I1621); Higher Education Authority (Program for Research in Third Level Institutions (2007-2011) via the INSPIRE program)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid041602
dc.identifier.citationHOBBS, R. G., SCHMIDT, M., BOLGER, C. T., GEORGIEV, Y. M., FLEMING, P., MORRIS, M. A., PETKOV, N., HOLMES, J. D., XIU, F., WANG, K. L., DJARA, V., YU, R. & COLINGE, J.-P. 2012. Resist–substrate interface tailoring for generating high-density arrays of Ge and Bi2Se3 nanowires by electron beam lithography. Journal of Vacuum Science & Technology B, 30, 041602(1)-041602(7). doi: 10.1116/1.4724302en
dc.identifier.doi10.1116/1.4724302
dc.identifier.endpage041602(7)en
dc.identifier.issn2166-2754
dc.identifier.issn2166-2746
dc.identifier.issued4en
dc.identifier.journaltitleJournal of Vacuum Science & Technology Ben
dc.identifier.startpage041602(1)en
dc.identifier.urihttps://hdl.handle.net/10468/2801
dc.identifier.volume30en
dc.language.isoenen
dc.publisherAmerican Institute of Physics Publishingen
dc.relation.urihttp://scitation.aip.org/content/avs/journal/jvstb/30/4/10.1116/1.4724302
dc.rights© 2012 American Vacuum Society. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Journal of Vacuum Science & Technology B, 30:4, 041602 (2012) and may be found at http://scitation.aip.org/content/avs/journal/jvstb/30/4/10.1116/1.4724302en
dc.subjectNanofabricationen
dc.subjectElectron beam lithographyen
dc.subjectElemental semiconductorsen
dc.subjectBismuth compoundsen
dc.subjectNanowiresen
dc.subjectGermaniumen
dc.subjectTopological insulatorsen
dc.subjectResistsen
dc.subjectNanolithographyen
dc.titleResist-substrate interface tailoring for generating high density arrays of Ge and Bi2Se3 nanowires by electron beam lithographyen
dc.typeArticle (peer-reviewed)en
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