Refractive index dynamics of InAs/GaAs quantum dots

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dc.contributor.authorCrowley, Mark T.
dc.contributor.authorHoulihan, John
dc.contributor.authorPiwonski, Tomasz
dc.contributor.authorO'Driscoll, Ian
dc.contributor.authorWilliams, David P.
dc.contributor.authorO'Reilly, Eoin P.
dc.contributor.authorUskov, Alexander V.
dc.contributor.authorHuyet, Guillaume
dc.contributor.funderScience Foundation Ireland
dc.date.accessioned2017-07-28T09:23:23Z
dc.date.available2017-07-28T09:23:23Z
dc.date.issued2013
dc.description.abstractThe refractive index dynamics of an InAs/InGaAs/GaAs dots-in-a-well semiconductor optical amplifier is calculated and compared with experimental results. The fast and slow recovery timescales together with the behaviour with increasing injection are reproduced and explained in terms of the density of carriers available in upper quantum dot and continuum states. Also, a Coulomb-mediated shift of the dot susceptibility is suggested as responsible for the fast recovery of the phase. (C) 2013 AIP Publishing LLC. (DOI: 10.1063/1.4813472)en
dc.description.sponsorshipScience Foundation Ireland (06/IN.1/I90)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid21114
dc.identifier.citationCrowley, M. T., Houlihan, J., Piwonski, T., O'Driscoll, I., Williams, D. P., O'Reilly, E. P., Uskov, A. V. and Huyet, G. (2013) 'Refractive index dynamics of InAs/GaAs quantum dots', Applied Physics Letters, 103(2), pp. 021114. doi: 10.1063/1.4813472en
dc.identifier.doi10.1063/1.4813472
dc.identifier.endpage4
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued2
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4283
dc.identifier.volume103
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.4813472
dc.rights© 2013 AIP Publishing LLC..This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Crowley, M. T., Houlihan, J., Piwonski, T., O'Driscoll, I., Williams, D. P., O'Reilly, E. P., Uskov, A. V. and Huyet, G. (2013) 'Refractive index dynamics of InAs/GaAs quantum dots', Applied Physics Letters, 103(2), pp. 021114 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4813472en
dc.subjectSemiconductor optical amplifiersen
dc.subjectLasersen
dc.subjectGaasen
dc.subjectGainen
dc.subjectGround statesen
dc.subjectQuantum dotsen
dc.subjectIII-V semiconductorsen
dc.subjectRefractive indexen
dc.subjectCarrier densityen
dc.titleRefractive index dynamics of InAs/GaAs quantum dotsen
dc.typeArticle (peer-reviewed)en
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