Probing thermal flux in twinned Ge nanowires through Raman spectroscopy

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dc.contributor.authorMajumdar, Dipanwita
dc.contributor.authorBiswas, Subhajit
dc.contributor.authorGhoshal, Tandra
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorSingha, Achintya
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2018-09-12T10:43:28Z
dc.date.available2018-09-12T10:43:28Z
dc.date.issued2015-11
dc.date.updated2018-08-20T15:21:49Z
dc.description.abstractWe report a noninvasive optical technique based on micro-Raman spectroscopy to study the temperature-dependent phonon behavior of normal (nondefective) and twinned germanium nanowires (Ge-NWs). We studied thermophysical properties of Ge-NWs from Raman spectra, measured by varying excitation laser power at ambient condition. We derived the laser-induced temperature rise during Raman measurements by analyzing the Raman peak position for both the NWs, and for a comparative study we performed the same for bulk Ge. The frequency of the Ge–Ge phonon mode softens for all the samples with the increase in temperature, and the first-order temperature coefficient (χT) for defected NWs is found to be higher than normal NWs and bulk. We demonstrated that apart from the size, the lamellar twinning and polytype phase drastically affect the heat transport properties of NWs.en
dc.description.sponsorshipScience Foundation Ireland (International Strategic Cooperation Award (ISCA) India−Ireland program)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationMajumdar, D., Biswas, S., Ghoshal, T., Holmes, J. D. and Singha, A. (2015) 'Probing Thermal Flux in Twinned Ge Nanowires through Raman Spectroscopy', ACS Applied Materials & Interfaces, 7(44), pp. 24679-24685. doi: 10.1021/acsami.5b07025en
dc.identifier.doi10.1021/acsami.5b07025
dc.identifier.endpage24685en
dc.identifier.issn1944-8244
dc.identifier.issued44en
dc.identifier.journaltitleAcs Applied Materials & Interfacesen
dc.identifier.startpage24679en
dc.identifier.urihttps://hdl.handle.net/10468/6755
dc.identifier.volume7en
dc.language.isoenen
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Investigator Programme/14/IA/2513/IE/Silicon Compatible, Direct Band-Gap Nanowire Materials For Beyond-CMOS Devices/en
dc.relation.urihttps://pubs.acs.org/doi/10.1021/acsami.5b07025
dc.rights© 2015 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acsami.5b07025en
dc.subjectGermanium nanowireen
dc.subjectLaser-induced heatingen
dc.subjectPolytype phaseen
dc.subjectRaman spectroscopyen
dc.subjectThermal propertiesen
dc.titleProbing thermal flux in twinned Ge nanowires through Raman spectroscopyen
dc.typeArticle (peer-reviewed)en
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