A combined hard x-ray photoelectron spectroscopy and electrical characterisation study of metal/SiO2/Si(100) metal-oxide-semiconductor structures

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dc.contributor.authorWalsh, Lee A.
dc.contributor.authorHughes, Gregory
dc.contributor.authorHurley, Paul K.
dc.contributor.authorLin, Jun
dc.contributor.authorWoicik, Joseph C.
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderU.S. Department of Energy
dc.date.accessioned2017-07-28T09:23:24Z
dc.date.available2017-07-28T09:23:24Z
dc.date.issued2012
dc.description.abstractCombined hard x-ray photoelectron spectroscopy (HAXPES) and electrical characterisation measurements on identical Si based metal-oxide-semiconductor structures have been performed. The results obtained indicate that surface potential changes at the Si/SiO2 interface due to the presence of a thin Al or Ni gate layer can be detected with HAXPES. Changes in the Si/SiO2 band bending at zero gate voltage and the flat band voltage for the case of Al and Ni gate layers derived from the silicon core levels shifts observed in the HAXPES spectra are in agreement with values derived from capacitance-voltage measurements. (C) 2012 American Institute of Physics. (http://dx.doi.org/10.1063/1.4770380)en
dc.description.sponsorshipSFI (SFI/09/IN.1/I2633); U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences (DE-AC02-98CH10886)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid241602
dc.identifier.citationWalsh, L. A., Hughes, G., Hurley, P. K., Lin, J. and Woicik, J. C. (2012) 'A combined hard x-ray photoelectron spectroscopy and electrical characterisation study of metal/SiO2/Si(100) metal-oxide-semiconductor structures', Applied Physics Letters, 101(24), pp. 241602. doi: 10.1063/1.4770380en
dc.identifier.doi10.1063/1.4770380
dc.identifier.endpage4
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued24
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4292
dc.identifier.volume101
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.4770380
dc.rights© 2012 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Walsh, L. A., Hughes, G., Hurley, P. K., Lin, J. and Woicik, J. C. (2012) 'A combined hard x-ray photoelectron spectroscopy and electrical characterisation study of metal/SiO2/Si(100) metal-oxide-semiconductor structures', Applied Physics Letters, 101(24), pp. 241602 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4770380en
dc.subjectP-b centersen
dc.subjectSiliconen
dc.subjectInterfaceen
dc.subjectNickelen
dc.subjectFermi levelsen
dc.subjectWork functionsen
dc.subjectSiliconen
dc.subjectSurface chargeen
dc.titleA combined hard x-ray photoelectron spectroscopy and electrical characterisation study of metal/SiO2/Si(100) metal-oxide-semiconductor structuresen
dc.typeArticle (peer-reviewed)en
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