The zero temperature coefficient in junctionless nanowire transistors

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dc.contributor.authorTrevisoli, Renan D.
dc.contributor.authorDoria, Rodrigo T.
dc.contributor.authorde Souza, Michelly
dc.contributor.authorDas, Samaresh
dc.contributor.authorFerain, Isabelle
dc.contributor.authorPavanello, Marcelo Antonio
dc.contributor.funderFundação de Amparo à Pesquisa do Estado de São Paulo
dc.contributor.funderCoordenação de Aperfeiçoamento de Pessoal de Nível Superior
dc.contributor.funderConselho Nacional de Desenvolvimento Científico e Tecnológico
dc.date.accessioned2017-07-28T09:23:25Z
dc.date.available2017-07-28T09:23:25Z
dc.date.issued2012
dc.description.abstractThis Letter presents an analysis of the zero temperature coefficient (ZTC) bias in junctionless nanowire transistors (JNTs). Unlike in previous works, which had shown that JNT did not present a ZTC point, this work shows that ZTC may occur in JNTs depending mainly on the series resistance of the devices and its dependence on the temperature. Experimental results of drain current, threshold voltage, and series resistance are presented for both long and short channel n and p-type devices. (C) 2012 American Institute of Physics. (http://dx.doi.org/10.1063/1.4744965)en
dc.description.sponsorshipFAPESP; CAPES; CNPqen
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid62101
dc.identifier.citationTrevisoli, R. D., Doria, R. T., Souza, M. d., Das, S., Ferain, I. and Pavanello, M. A. (2012) 'The zero temperature coefficient in junctionless nanowire transistors', Applied Physics Letters, 101(6), pp. 062101. doi: 10.1063/1.4744965en
dc.identifier.doi10.1063/1.4744965
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued6
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4297
dc.identifier.volume101
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.4744965
dc.rights© 2012 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Trevisoli, R. D., Doria, R. T., Souza, M. d., Das, S., Ferain, I. and Pavanello, M. A. (2012) 'The zero temperature coefficient in junctionless nanowire transistors', Applied Physics Letters, 101(6), pp. 062101 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4748909en
dc.subjectDopingen
dc.subjectIonizationen
dc.subjectCarrier mobilityen
dc.subjectTransistorsen
dc.subjectHigh temperature instrumentsen
dc.titleThe zero temperature coefficient in junctionless nanowire transistorsen
dc.typeArticle (peer-reviewed)en
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