GHz bandwidth semipolar (112¯2) InGaN/GaN light-emitting diodes

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dc.contributor.authorDinh, Duc V.
dc.contributor.authorQuan, Zhiheng
dc.contributor.authorRoycroft, Brendan
dc.contributor.authorParbrook, Peter J.
dc.contributor.authorCorbett, Brian
dc.contributor.funderSeventh Framework Programmeen
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2021-03-16T09:55:13Z
dc.date.available2021-03-16T09:55:13Z
dc.date.issued2016-12-12
dc.date.updated2021-03-16T09:44:26Z
dc.description.abstractWe report on the electrical-to-optical modulation bandwidths of non-mesa-etched semipolar (112¯2) InGaN/GaN light-emitting diodes (LEDs) operating at 430–450 nm grown on high-quality (112¯2) GaN templates, which were prepared on patterned (101¯2) 𝑟-plane sapphire substrates. The measured frequency response at −3 dB of the LEDs was up to 1 GHz. A high back-to-back data transmission rate of above 2.4 Gbps is demonstrated using a non-return-to-zero on-off keying modulation scheme. This indicates that (112¯2) LEDs are suitable gigabit per second data transmission for use in visible-light communication applications.en
dc.description.sponsorshipSeventh Framework Programme (EU-FP7235 ALIGHT project under agreement no. FP7-280587); Science Foundation Ireland ( IPIC programme 12/RC/2276)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationDinh, D. V., Quan, Z., Roycroft, B., Parbrook, P. J. and Corbett, B. (2016) 'GHz bandwidth semipolar (112¯2) InGaN/GaN light-emitting diodes', Optics Letters, 41(24), pp. 5752-5755. doi: 10.1364/OL.41.005752en
dc.identifier.doi10.1364/OL.41.005752en
dc.identifier.eissn1539-4794
dc.identifier.endpage5755en
dc.identifier.issn0146-9592
dc.identifier.issued24
dc.identifier.journaltitleOptics Lettersen
dc.identifier.startpage5752en
dc.identifier.urihttps://hdl.handle.net/10468/11143
dc.identifier.volume41en
dc.language.isoenen
dc.publisherOptical Society of Americaen
dc.rights© 2016, Optical Society of America. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited.en
dc.subjectModulation bandwidthen
dc.subjectCommunicationen
dc.subjectSapphireen
dc.titleGHz bandwidth semipolar (112¯2) InGaN/GaN light-emitting diodesen
dc.typeArticle (peer-reviewed)en
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