Current-line oriented pore formation in n-InP anodized in KOH

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dc.contributor.authorQuill, Nathan
dc.contributor.authorLynch, Robert P.
dc.contributor.authorO'Dwyer, Colm
dc.contributor.authorBuckley, D. Noel
dc.contributor.funderIrish Research Council for Science, Engineering and Technologyen
dc.date.accessioned2018-05-21T14:07:33Z
dc.date.available2018-05-21T14:07:33Z
dc.date.issued2013-07
dc.date.updated2018-05-16T00:07:55Z
dc.description.abstractElectrochemically formed pores in InP in KOH switch from being crystallographically oriented (CO) to being current-line oriented (CLO) above a specific potential in both 17 mol dm-3 and 2.5 mol dm-3 KOH at a temperature of 10oC. The CLO pores formed in KOH have roughly elliptical cross sections, and are wider along the than along the perpendicular <011> direction. The CLO pores can form only when a critical porosity is reached and their formation marks the transition from porous to planar etching. Many of the features of pore formation are explained by evoking the effect that both temperature and electrolyte concentration can have on the effective diffusion length of holes at the semiconductor-solution interface.en
dc.description.sponsorshipIrish Research Council for Science Engineering and Technology (postgraduate scholarships)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationQuill, N., Lynch, R. P., O'Dwyer, C. and Buckley, D. N. (2013) 'Current-Line Oriented Pore Formation in n-InP Anodized in KOH', ECS Transactions, 50(37), pp. 143-153. doi: 10.1149/05037.0143ecsten
dc.identifier.doi10.1149/05037.0143ecst
dc.identifier.endpage153en
dc.identifier.issn1938-5862
dc.identifier.issn1938-6737
dc.identifier.issued37en
dc.identifier.journaltitleElectrochemical Society Transactionsen
dc.identifier.startpage143en
dc.identifier.urihttps://hdl.handle.net/10468/6160
dc.identifier.volume50en
dc.language.isoenen
dc.publisherElectrochemical Societyen
dc.relation.requireshttp://ecst.ecsdl.org/content/50/37/143.abstract
dc.rights© 2013 ECS - The Electrochemical Societyen
dc.subjectPore sizeen
dc.subjectElectrochemical propertiesen
dc.subjectCritical porosityen
dc.subjectEffective diffusion lengthen
dc.subjectElectrolyte concentrationen
dc.subjectElliptical cross sectionen
dc.subjectInPen
dc.subjectPore formationen
dc.titleCurrent-line oriented pore formation in n-InP anodized in KOHen
dc.typeArticle (peer-reviewed)en
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