Effect of strain and diameter on electronic and charge transport properties of indium arsenide nanowires

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dc.check.date2020-08-04
dc.check.infoAccess to this article is restricted until 24 months after publication by request of the publisher.en
dc.contributor.authorRazavi, Pedram
dc.contributor.authorGreer, James C.
dc.contributor.funderSeventh Framework Programmeen
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderHigher Education Authorityen
dc.date.accessioned2020-02-18T16:00:05Z
dc.date.available2020-02-18T16:00:05Z
dc.date.issued2018-08-04
dc.date.updated2020-02-18T15:52:13Z
dc.description.abstractThe impact of uni-axial compressive and tensile strain and diameter on the electronic band structure of indium arsenide (InAs) nanowires (NWs) is investigated using first principles calculations. Effective masses and band gaps are extracted from the electronic structure for relaxed and strained nanowires. Material properties are extracted and applied to determine charge transport through the NWs described within the effective mass approximation and by applying the non-equilibrium Green’s function method. The transport calculations self-consistently solve the Schrödinger equation with open boundary conditions and Poisson’s equation for the electrostatics. The device structure corresponds to a metal oxide semiconductor field effect transistor (MOSFET) with an InAs NW channel in a gate-all-around geometry. The channel cross sections are for highly scaled devices within a range of 3 × 3–1 × 1 nm2. Strain effects on the band structures and electrical performance are evaluated for different NW orientations and diameters by quantifying subthreshold swing and ON/OFF current ratio. Our results reveal for InAs NW transistors with critical dimensions of a few nanometer, the crystallographic orientation and quantum confinement effects dominate device behavior, nonetheless strain effects must be included to provide accurate predictions of transistor performance.en
dc.description.sponsorshipScience Foundation Ireland and Higher Education Authority (SFI/HEA Irish Centre for High-EndComputing (ICHEC))en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationRazavi, P. and Greer, J. C. (2018) 'Effect of strain and diameter on electronic and charge transport properties of indium arsenide nanowires', Solid-State Electronics, 149, pp. 6-14. doi: 10.1016/j.sse.2018.08.001en
dc.identifier.doi10.1016/j.sse.2018.08.001en
dc.identifier.endpage14en
dc.identifier.issn0038-1101
dc.identifier.journaltitleSolid-State Electronicsen
dc.identifier.startpage6en
dc.identifier.urihttps://hdl.handle.net/10468/9663
dc.identifier.volume149en
dc.language.isoenen
dc.publisherElsevier
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::NMP/604416/EU/From atom-to-Device Explicit simulation Environment for Photonics and Electronics Nanostructures/DEEPENen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Investigator Programme/13/IA/1956/IE/SMALL: Semi-Metal ALL-in-One Technologies/en
dc.relation.urihttp://www.sciencedirect.com/science/article/pii/S0038110118300911
dc.rights© 2018 Elsevier Ltd. All rights reserved. This manuscript version is made available under the CC BY-NC-ND 4.0 licence.en
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.subjectInAs nanowiresen
dc.subjectStrainen
dc.subjectCharge transporten
dc.subjectSemiconductorsen
dc.subjectDFTen
dc.subjectMeta-GGAen
dc.titleEffect of strain and diameter on electronic and charge transport properties of indium arsenide nanowiresen
dc.typeArticle (peer-reviewed)en
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