Optical properties of hybrid quantum dot/quantum well active region based on GaAs system

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dc.contributor.authorThoma, Jiri
dc.contributor.authorOchalski, Tomasz J.
dc.contributor.authorHugues, Maxime
dc.contributor.authorZhang, Shiyong
dc.contributor.authorHegarty, Stephen P.
dc.contributor.authorHuyet, Guillaume
dc.contributor.funderScience Foundation Ireland
dc.date.accessioned2017-09-20T10:06:33Z
dc.date.available2017-09-20T10:06:33Z
dc.date.issued2012
dc.description.abstractWe experimentally investigate the optical properties of a novel hybrid material/structure consisting of a GaInNAs quantum well and stacked InAs/InGaAs quantum dot layers on GaAs substrate. We demonstrate that the strong quantum confined Stark effect within the quantum well can effectively control well-dot detuning when reverse bias voltage is applied. With a combination of low-and room-temperature time resolved luminescence spectra we infer device absorption recovery time under 30 ps. These properties could be utilized in high-speed optoelectronics devices, in particular electro-absorption modulated lasers and reconfigurable multisection devices, where the hybrid quantum dots - quantum well material system could offer easily and rapidly interchangeable function, i.e., emission gain or variable attenuation, of each section depending on the external bias. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4752279]en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid63103
dc.identifier.citationThoma, J., Ochalski, T. J., Hugues, M., Zhang, S., Hegarty, S. P. and Huyet, G. (2012) 'Optical properties of hybrid quantum dot/quantum well active region based on GaAs system', Journal of Applied Physics, 112(6), 063103 (4pp). doi: 10.1063/1.4752279en
dc.identifier.doi10.1063/1.4752279
dc.identifier.endpage4
dc.identifier.issn0021-8979
dc.identifier.issued6
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4729
dc.identifier.volume112
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Strategic Research Cluster/07/SRC/I1173/IE/SRC PiFAS: Photonics - Integration From Atoms to Systems (PiFAS)/
dc.relation.urihttp://aip.scitation.org/doi/10.1063/1.4752279
dc.rights© 2012, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Thoma, J., Ochalski, T. J., Hugues, M., Zhang, S., Hegarty, S. P. and Huyet, G. (2012) 'Optical properties of hybrid quantum dot/quantum well active region based on GaAs system', Journal of Applied Physics, 112(6), 063103 (4pp). doi: 10.1063/1.4752279 and may be found at http://aip.scitation.org/doi/10.1063/1.4752279en
dc.subjectQuantum wellsen
dc.subjectQuantum dotsen
dc.subjectPhotoluminescenceen
dc.subjectIII-V semiconductorsen
dc.subjectStark effecten
dc.titleOptical properties of hybrid quantum dot/quantum well active region based on GaAs systemen
dc.typeArticle (peer-reviewed)en
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