Two-dimensional carrier density distribution inside a high power tapered laser diode

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dc.contributor.authorPagano, Roberto
dc.contributor.authorZiegler, Mathias
dc.contributor.authorTomm, Jens W.
dc.contributor.authorEsquivias, I.
dc.contributor.authorTijero, J. M. G.
dc.contributor.authorO'Callaghan, James R.
dc.contributor.authorMichel, N.
dc.contributor.authorKrakowski, M.
dc.contributor.authorCorbett, Brian M.
dc.contributor.funderEuropean Commission
dc.date.accessioned2017-07-28T11:04:40Z
dc.date.available2017-07-28T11:04:40Z
dc.date.issued2011
dc.description.abstractThe spontaneous emission of a GaAs-based tapered laser diode emitting at lambda = 1060 nm was measured through a window in the transparent substrate in order to study the carrier density distribution inside the device. It is shown that the tapered geometry is responsible for nonuniform amplification of the spontaneous/stimulated emission which in turn influences the spatial distribution of the carriers starting from below threshold. The carrier density does not clamp at the lasing threshold and above it the device shows lateral spatial hole-burning caused by high stimulated emission along the cavity center. (C) 2011 American Institute of Physics. (doi: 10.1063/1.3596445)en
dc.description.sponsorshipEuropean Commission (European Union project WWW.BRIGHTER.EU Contract No. IST-2005-035266)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid221110
dc.identifier.citationPagano, R., Ziegler, M., Tomm, J. W., Esquivias, I., Tijero, J. M. G., O’Callaghan, J. R., Michel, N., Krakowski, M. and Corbett, B. (2011) 'Two-dimensional carrier density distribution inside a high power tapered laser diode', Applied Physics Letters, 98(22), pp. 221110. doi: 10.1063/1.3596445en
dc.identifier.doi10.1063/1.3596445
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued22
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4320
dc.identifier.volume98
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.3596445
dc.rights© 2011 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Pagano, R., Ziegler, M., Tomm, J. W., Esquivias, I., Tijero, J. M. G., O’Callaghan, J. R., Michel, N., Krakowski, M. and Corbett, B. (2011) 'Two-dimensional carrier density distribution inside a high power tapered laser diode', Applied Physics Letters, 98(22), pp. 221110 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3596445en
dc.subjectSpontaneous emissionen
dc.subjectSemiconductor-lasersen
dc.subjectCarrier densityen
dc.subjectSpontaneous emissionen
dc.subjectStimulated emissionen
dc.subjectCharge coupled devicesen
dc.subjectOptical resonatorsen
dc.titleTwo-dimensional carrier density distribution inside a high power tapered laser diodeen
dc.typeArticle (peer-reviewed)en
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