Doping of III-nitride materials

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dc.contributor.authorPampili, Pietro
dc.contributor.authorParbrook, Peter J.
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2017-05-12T09:11:44Z
dc.date.available2017-05-12T09:11:44Z
dc.date.issued2016-12-04
dc.date.updated2017-05-12T09:04:33Z
dc.description.abstractIn this review paper we will report the current state of research regarding the doping of III-nitride materials and their alloys. GaN is a mature material with both n-type and p-type doping relatively well understood, and while n-GaN is easily achieved, p-type doping requires much more care. There are significant efforts to extend the composition range that can be controllably doped for AlGaInN alloys. This would allow application in shorter and longer wavelength optoelectronics as well as extending power electronic devices. It is found that doping of AlGaN and InGaN alloys with low-gallium-content has particular challenges, especially for p-materials and these issues are described.en
dc.description.sponsorshipScience Foundation Ireland (SFI/10/IN.1/I2993 and SFI/07/EN/E001A)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationPampili, P. and Parbrook, P. J. (2017) 'Doping of III-nitride materials', Materials Science in Semiconductor Processing, 62, pp. 180-191. doi: 10.1016/j.mssp.2016.11.006en
dc.identifier.doi10.1016/j.mssp.2016.11.006
dc.identifier.endpage191en
dc.identifier.issn1369-8001
dc.identifier.journaltitleMaterials Science In Semiconductor Processingen
dc.identifier.startpage180en
dc.identifier.urihttps://hdl.handle.net/10468/3951
dc.identifier.volume62en
dc.language.isoenen
dc.publisherElsevieren
dc.rights© 2016 Elsevier. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.subjectGallium nitrideen
dc.subjectIndium nitrideen
dc.subjectAluminium nitrideen
dc.subjectSemiconductorsen
dc.subjectDopingen
dc.subjectConductivityen
dc.titleDoping of III-nitride materialsen
dc.typeArticle (peer-reviewed)en
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