Doping of III-nitride materials
dc.contributor.author | Pampili, Pietro | |
dc.contributor.author | Parbrook, Peter J. | |
dc.contributor.funder | Science Foundation Ireland | en |
dc.date.accessioned | 2017-05-12T09:11:44Z | |
dc.date.available | 2017-05-12T09:11:44Z | |
dc.date.issued | 2016-12-04 | |
dc.date.updated | 2017-05-12T09:04:33Z | |
dc.description.abstract | In this review paper we will report the current state of research regarding the doping of III-nitride materials and their alloys. GaN is a mature material with both n-type and p-type doping relatively well understood, and while n-GaN is easily achieved, p-type doping requires much more care. There are significant efforts to extend the composition range that can be controllably doped for AlGaInN alloys. This would allow application in shorter and longer wavelength optoelectronics as well as extending power electronic devices. It is found that doping of AlGaN and InGaN alloys with low-gallium-content has particular challenges, especially for p-materials and these issues are described. | en |
dc.description.sponsorship | Science Foundation Ireland (SFI/10/IN.1/I2993 and SFI/07/EN/E001A) | en |
dc.description.status | Peer reviewed | en |
dc.description.version | Accepted Version | en |
dc.format.mimetype | application/pdf | en |
dc.identifier.citation | Pampili, P. and Parbrook, P. J. (2017) 'Doping of III-nitride materials', Materials Science in Semiconductor Processing, 62, pp. 180-191. doi: 10.1016/j.mssp.2016.11.006 | en |
dc.identifier.doi | 10.1016/j.mssp.2016.11.006 | |
dc.identifier.endpage | 191 | en |
dc.identifier.issn | 1369-8001 | |
dc.identifier.journaltitle | Materials Science In Semiconductor Processing | en |
dc.identifier.startpage | 180 | en |
dc.identifier.uri | https://hdl.handle.net/10468/3951 | |
dc.identifier.volume | 62 | en |
dc.language.iso | en | en |
dc.publisher | Elsevier | en |
dc.rights | © 2016 Elsevier. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/ | en |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/4.0/ | en |
dc.subject | Gallium nitride | en |
dc.subject | Indium nitride | en |
dc.subject | Aluminium nitride | en |
dc.subject | Semiconductors | en |
dc.subject | Doping | en |
dc.subject | Conductivity | en |
dc.title | Doping of III-nitride materials | en |
dc.type | Article (peer-reviewed) | en |