Seedless growth of sub-10 nm germanium nanowires

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dc.contributor.authorHobbs, Richard G.
dc.contributor.authorBarth, Sven
dc.contributor.authorPetkov, Nikolay
dc.contributor.authorZirngast, Michaela
dc.contributor.authorMarschner, Christoph
dc.contributor.authorMorris, Michael A.
dc.contributor.authorHolmes, Justin D.
dc.contributor.funderIrish Research Council for Science, Engineering and Technologyen
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderHigher Education Authorityen
dc.date.accessioned2018-08-28T15:23:24Z
dc.date.available2018-08-28T15:23:24Z
dc.date.issued2010-09-13
dc.date.updated2018-08-06T15:35:31Z
dc.description.abstractWe report the self-seeded growth of highly crystalline Ge nanowires, with a mean diameter as small as 6 nm without the need for a metal catalyst. The nanowires, synthesized using the purpose-built precursor hexakis(trimethylsilyl)digermane, exhibit high aspect ratios (>1000) while maintaining a uniform core diameter along their length. Additionally, the nanowires are encased in an amorphous shell of material derived from the precursor, which acts to passivate their surfaces and isolates the Ge seed particles from which the nanowires grow. The diameter of the nanowires was found to depend on the synthesis temperature employed. Specifically, there is a linear relationship between the inverse radius of the nanowires and the synthesis temperature, which can be explained by a model for the size-dependent melting of simple metals.en
dc.description.sponsorshipHigher Education Authority (HEA Program for Research in Third Level Institutions (2007-2011) via the INSPIRE programme)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationHobbs, R. G., Barth, S., Petkov, N., Zirngast, M., Marschner, C., Morris, M. A. and Holmes, J. D. (2010) 'Seedless Growth of Sub-10 nm Germanium Nanowires', Journal of the American Chemical Society, 132(39), pp. 13742-13749.en
dc.identifier.doi10.1021/ja1035368
dc.identifier.endpage13749en
dc.identifier.issn0002-7863
dc.identifier.journaltitleJournal of the American Chemical Societyen
dc.identifier.startpage13742en
dc.identifier.urihttps://hdl.handle.net/10468/6651
dc.identifier.volume132en
dc.language.isoenen
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Research Frontiers Programme (RFP)/07/RFP/MASF710/IE/Nanocable Arrays for Future Electronics/en
dc.relation.urihttp://pubs.acs.org/doi/10.1021/ja1035368
dc.rights© 2010 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Journal of the American Chemical Society, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/journal/jacsat/about.htmlen
dc.subjectNanowiresen
dc.subjectGermaniumen
dc.subjectNanowireen
dc.subjectAspect ratioen
dc.subjectCatalystsen
dc.subjectCrystal structureen
dc.subjectMaterialsen
dc.subjectMorphologyen
dc.subjectNanotechnologyen
dc.subjectScanning electron microscopyen
dc.subjectSemiconductoren
dc.subjectSynthesisen
dc.subjectTemperatureen
dc.subjectTransmission electron microscopyen
dc.subjectX ray diffractionen
dc.titleSeedless growth of sub-10 nm germanium nanowiresen
dc.typeArticle (peer-reviewed)en
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