Laterally coupled distributed feedback lasers emitting at 2 μm with quantum dash active region and high-duty-cycle etched semiconductor gratings

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dc.check.date2018-02-01
dc.check.infoAccess to this article is restricted until 12 months after publication by request of the publisher.en
dc.contributor.authorPapatryfonos, Konstantinos
dc.contributor.authorSaladukha, Dzianis
dc.contributor.authorMerghem, Kamel
dc.contributor.authorJoshi, Siddharth
dc.contributor.authorLelarge, Francois
dc.contributor.authorBouchoule, Sophie
dc.contributor.authorKazazis, Dimitrios
dc.contributor.authorGuilet, Stephane
dc.contributor.authorLe Gratiet, Luc
dc.contributor.authorOchalski, Tomasz J.
dc.contributor.authorHuyet, Guillaume
dc.contributor.authorMartinez, Anthony
dc.contributor.authorRamdane, Abderrahim
dc.contributor.funderSeventh Framework Programmeen
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2017-05-12T11:09:02Z
dc.date.available2017-05-12T11:09:02Z
dc.date.issued2017-02-01
dc.date.updated2017-05-12T10:45:23Z
dc.description.abstractSingle-mode diode lasers on an InP(001) substrate have been developed using InAs/In0.53Ga0.47As quantum dash (Qdash) active regions and etched lateral Bragg gratings. The lasers have been designed to operate at wavelengths near 2 μm and exhibit a threshold current of 65 mA for a 600 μm long cavity, and a room temperature continuous wave output power per facet >5 mW. Using our novel growth approach based on the low ternary In0.53Ga0.47As barriers, we also demonstrate ridge-waveguide lasers emitting up to 2.1 μm and underline the possibilities for further pushing the emission wavelength out towards longer wavelengths with this material system. By introducing experimentally the concept of high-duty-cycle lateral Bragg gratings, a side mode suppression ratio of >37 dB has been achieved, owing to an appreciably increased grating coupling coefficient of κ ∼ 40 cm−1. These laterally coupled distributed feedback (LC-DFB) lasers combine the advantage of high and well-controlled coupling coefficients achieved in conventional DFB lasers, with the regrowth-free fabrication process of lateral gratings, and exhibit substantially lower optical losses compared to the conventional metal-based LC-DFB lasers.en
dc.description.sponsorshipScience Foundation Ireland (US-Ireland R&D Partnership Programme)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid053101
dc.identifier.citationPapatryfonos, K., Saladukha, D., Merghem, K., Joshi, S., Lelarge, F., Bouchoule, S., Kazazis, D., Guilet, S., Gratiet, L. L., Ochalski, T. J., Huyet, G., Martinez, A. and Ramdane, A. (2017) ‘Laterally coupled distributed feedback lasers emitting at 2 μm with quantum dash active region and high-duty-cycle etched semiconductor gratings’, Journal of Applied Physics, 121, 053101 (8pp). doi:10.1063/1.4975036en
dc.identifier.doi10.1063/1.4975036
dc.identifier.endpage8en
dc.identifier.issn0021-8979
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/3954
dc.identifier.volume121en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP3::PEOPLE/264687/EU/Postgraduate Research on Photonics as an Enabling Technology/PROPHETen
dc.rights© 2017, the Authors. Reproduced with the permission of AIP Publishing from Journal of Applied Physics 121, 053101; doi: 10.1063/1.4975036en
dc.subjectBragg gratingsen
dc.subjectDistributed feedback lasersen
dc.subjectGallium arsenideen
dc.subjectIII-V semiconductorsen
dc.subjectIndium compoundsen
dc.subjectLaser cavity resonatorsen
dc.subjectLaser modesen
dc.subjectOptical lossesen
dc.subjectQuantum dash lasersen
dc.subjectRidge waveguidesen
dc.subjectWaveguide lasersen
dc.titleLaterally coupled distributed feedback lasers emitting at 2 μm with quantum dash active region and high-duty-cycle etched semiconductor gratingsen
dc.typeArticle (peer-reviewed)en
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