Optical matrix element in InAs/GaAs quantum dots: Dependence on quantum dot parameters

dc.contributor.authorAndreev, A. D.
dc.contributor.authorO'Reilly, Eoin P.
dc.contributor.funderScience Foundation Ireland
dc.date.accessioned2017-07-28T13:20:08Z
dc.date.available2017-07-28T13:20:08Z
dc.date.issued2005
dc.description.abstractWe present a theoretical analysis of the optical matrix element between the electron and hole ground states in InAs/GaAs quantum dots (QDs) modeled with a truncated pyramidal shape. We use an eight-band k center dot p Hamiltonian to calculate the QD electronic structure, including strain and piezoelectric effects. The ground state optical matrix element is very sensitive to variations in both the QD size and shape. For all shapes, the matrix element initially increases with increasing dot height, as the electron and hole wave functions become more localized in k space. Depending on the QD aspect ratio and on the degree of pyramidal truncation, the matrix element then reaches a maximum for some dot shapes at intermediate size beyond which it decreases abruptly in larger dots, where piezoelectric effects lead to a marked reduction in electron-hole overlap. (c) 2005 American Institute of Physics. (DOI:10.1063/1.2130378)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid213106
dc.identifier.citationAndreev, A. D. and O’Reilly, E. P. (2005) 'Optical matrix element in InAs/GaAs quantum dots: Dependence on quantum dot parameters', Applied Physics Letters, 87(21), pp. 213106. doi: 10.1063/1.2130378en
dc.identifier.doi10.1063/1.2130378
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued21
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4391
dc.identifier.volume87
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.2130378
dc.rights© 2005 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Andreev, A. D. and O’Reilly, E. P. (2005) 'Optical matrix element in InAs∕GaAs quantum dots: Dependence on quantum dot parameters', Applied Physics Letters, 87(21), pp. 213106 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2130378en
dc.subjectElectronic-structureen
dc.subjectGainen
dc.subjectLasersen
dc.subjectDistributionsen
dc.subjectOperationen
dc.subjectQuantum dotsen
dc.subjectWave functionsen
dc.subjectPiezoelectric fieldsen
dc.subjectIII-V semiconductorsen
dc.subjectGround statesen
dc.titleOptical matrix element in InAs/GaAs quantum dots: Dependence on quantum dot parametersen
dc.typeArticle (peer-reviewed)en
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